Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous medium. In this process hydrazine hydrate is used as reducing agent and NH 4 OH as the catalytic for the decomposition of hydrazine. By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film deposition was done. In this paper the structural, optical and electrical properties of CdTe film are reported. The XRD pattern shows that films are nanocrystalline in nature. The resistivity is found to be of the order of 4⋅ ⋅11 × × 10 3 Ω Ω-cm at 523 K temperature with an activation energy of ~ 0⋅ ⋅2 eV. The optical absorption studies show that films have direct band gap (1⋅ ⋅41 eV).
The electrical conductivity of naphthalene doped polystyrene (PS) films (≈ 61⋅58 μm thick) was studied as a function of dopant concentration and temperature. The formation of charge transfer (CT) complexes and strong concentration dependence of carrier mobility point out that the current carriers are transported through doped polymer system via hopping among sites associated with the dopant molecules. The activation energy, E a , was calculated from the graph of logσ vs 10 3 /T plot within low and high temperature regions.
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