Dielectric cavities support record low mode volumes by incorporating subwavelength features into photonic crystal unit cells.

Coupling plasmonics and silicon photonics is the best way to bridge the size gap between macroscopic optics and nanodevices in general and especially nanoelectronic devices. We report on the realization of key blocks for future plasmonic planar integrated optics, nano-optical couplers, and nanoslot waveguides that are compatible both with the silicon photonics and the CMOS microelectronics. Copper-based devices provide for very efficient optical coupling, unexpectedly low propagation losses and a broadband sub-50 nm optical confinement. The fabrication in a standard frontline microelectronic facilities hints broad possibilities of hybrid opto-electronic very large scale integration.

The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.