This paper presents a stack of silicon nitride (SiN x ) nano-films deposited with radio-frequency plasma-enhanced chemical deposition (RF PECVD) method on single-mode fiber end-face for refractive index (RI) sensing. The stack consist of high (n~2.4) and low (n~1.9) refractive index (at λ=1550 nm) SiN x nano-films arranged alternately. As a result of the experiment where 5 nano-layers were deposited, we received down to -30 dB-deep resonance in reflection spectrum at about λ=1550 nm. In the proposed sensing scheme both reflected power and wavelength of the resonance can be used for external RI measurements.
This work presents a study on sensing capabilities of stacks of nano-films deposited on a single-mode optical fiber end-faces. The stacks consist of periodically interchanging thin-film layers of materials characterized by different refractive indices (RI). The number of layers is relatively small to encourage light-analyte interactions. Two different deposition techniques are considered, i.e., radio frequency plasma enhanced chemical vapor deposition (RF PECVD) and physical vapor deposition by reactive magnetron sputtering (RMS). The former technique allows to deposit stacks consisting of silicon nitride nano-films, and the latter is well suited for aluminum and titanium oxides alternating layers. The structures are tested for external RI and temperature measurements.
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