We demonstrate an InGaN laser diode, in which the waveguiding quality of the device is improved by the introduction of highly doped \'01plasmonic\'02 layer constituting an upper part of the GaN substrate. Thanks to this, we were able to suppress the electromagnetic mode leakage into the substrate without generating additional strain in the structure, in contrast to the typical design relying on thick AlGaN claddings. The plasmonic substrate is built as a stack of gallium nitride layers of various electron concentrations deposited by a combination of hydride epitaxy and high-pressure solution method. The mentioned improvements led to the reduction of the threshold current density of our devices down to 2 kA/cm2 and to the optimization of the near and far field pattern
BaTiO 3 (BT) nanocrystalline thin films were plasma etched in the course of several experiments which varied in RF power as well as CF 4 /(CF 4 + Ar) gas-mixing ratio. The maximum etch rate of approximately 30 nm/min was observed for the maximum power (300 W) and pure Ar plasma atmosphere, which indicates that the process is controlled by the physical mechanism of Ar ion bombardment, while the increasing content of chemically active plasma component (CF 4 ) in the gas mixture slows down barium titanate etch rate.
Quantitative thermal measurements with spatial resolution allowing the examination of objects of submicron dimensions are still a challenging task. The quantity of methods providing spatial resolution better than 100 nm is very limited. One of them is scanning thermal microscopy (SThM). This method is a variant of atomic force microscopy which uses a probe equipped with a temperature sensor near the apex. Depending on the sensor current, either the temperature or the thermal conductivity distribution at the sample surface can be measured. However, like all microscopy methods, the SThM gives only qualitative information. Quantitative measuring methods using SThM equipment are still under development. In this paper, a method based on simultaneous registration of the static and the dynamic electrical resistances of the probe driven by the sum of dc and ac currents, and examples of its applications are described. Special attention is paid to the investigation of thin films deposited on thick substrates. The influence of substrate thermal properties on the measured signal and its dependence on thin film thermal conductivity and film thick-This article is part of the selected papers presented at the 18th International Conference on Photoacoustic and Photothermal Phenomena.
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