We present a detailed study on the rear contact formation of rear-surface-passivated silicon solar cells by full-area screen printing and alloying of aluminum pastes on the locally opened passivation layer. We demonstrate that applying conventional Al pastes exhibits two main problems: 1) high contact depths leading to an enlargement of the contact area and 2) low thicknesses of the Al-doped p + Si regions in the contact points resulting in poor electron shielding. We show that this inadequate contact formation can be directly linked to the deficiently low percentage of silicon that dissolves into the Al-Si melt during alloying. Thus, by intentionally adding silicon to the Al paste, we could significantly improve the contact geometry by reducing the contact depth and enlarging the Al-p + thickness in the contact points, enabling a simple industrially feasible way for the rear contact formation of silicon solar cells.Index Terms-Aluminum alloying, local back surface field, local emitter, silicon solar cells.
One main efficiency loss in industrial solar cells is the shading of the cell caused by the metal front side contacts. With the aerosol-printing technique plus an additional light-induced plating (LIP) step, not only is the geometrical contact width narrowed compared to screen-printed contacts but also the shape of the finger changes. In this work, the effective shading of different finger types is analysed with two different measurement methods. The essential parameter for characterising the finger is the effective width which can be reduced drastically compared to the geometrical width due to total internal reflection at the glass-air layer and the reflection from the roundish edges of the contact fingers into the cell. This parameter was determined with different methods. It could be shown that for aerosol-printed fingers the effective (optical) width is only 38% of its geometrical width, while for standard screen-printed fingers it is 47%. The measured values are compared to a theoretical model for an aerosol-printed and plated finger and are in good agreement.
In this paper, first generation back-contact backjunction (BC-BJ) silicon solar cells with cell efficiencies well above η = 20% were fabricated. The process sequence is industrially feasible, requires only one high-temperature step (codiffusion), and relies only on industrially available pattering technologies. The silicon-doping is performed from pre-patterned solid diffusion sources, which allow for the precise adjustment of phosphorus-and boron-doping levels. Based on the investigated process technologies, BC-BJ solar cells with gap and without gap between adjacent n + -and p + -doped areas were processed. On the one hand, a strong reduction of the process effort is possible by omitting the gap regions. On the other hand, parasitic tunneling currents through the narrow space charge region may occur. Hence, deep doped areas were realized to avoid tunneling currents in gap-free BC-BJ cells. This paper finishes with a detailed characterization of the manufactured cells including important cell measurements like I-V, SunsVOC, quantum efficiency, and an analysis of the cell specific fill factor losses.
Fraunhofer ISE's concept for an advanced metallization of silicon solar cells is based on a two-step process: the deposition of a seed layer to form a mechanical and electrical contact and the subsequent thickening of this seed layer by a plating step, preferably by light-induced plating (LIP). The concept of a multi-layer metallization is used for most of the relevant high-efficiency cell types in industry. The main advantage of this concept is that each layer can be optimized individually, i.e. the seed layer to achieve an optimal electrical and mechanical contact and the plated layer in terms of high lateral conductivity and good solderability. Solar cells results with seed layers fabricated by aerosol printing, chemical Ni plating on cells with a laser-structured dielectric layer and laser-enhanced Ni plating are presented
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