The intermetallic compound NiAl ͑50:50 at. %͒ has been shown to be a low-resistance ohmic contact to n-GaN and n-AlGaN. NiAl contacts on n-GaN (nϭ2.5ϫ10 17 cm Ϫ3 ) had a specific contact resistance of 9.4ϫ10 Ϫ6 ⍀ cm 2 upon annealing at 850°C for 5 min. NiAl contacts annealed at 900°C for 5 min in n-Al 0.12 Ga 0.88 N (nϭ2.4ϫ10 18 cm Ϫ3 ) and n-Al 0.18 Ga 0.82 N (nϭ2.7 ϫ10 18 cm Ϫ3 ) had specific contact resistances of 2.1ϫ10 Ϫ5 ⍀ cm 2 and 4.7ϫ10 Ϫ5 ⍀ cm 2 , respectively. Additionally, these contacts were subjected to long-term annealing at 600°C for 100 h. On n-GaN, the contact specific contact resistance degraded from 9.4ϫ10 Ϫ6 ⍀ cm 2 to 5.3 ϫ10 Ϫ5 ⍀ cm 2 after the long-term anneal. Contacts to n-Al 0.18 Ga 0.82 N showed only slight degradation with a change in contact resistance, from 4.7ϫ10 Ϫ5 ⍀ cm 2 to 9.2ϫ10 Ϫ5 ⍀ cm 2 . These results demonstrate the NiAl has great promise as a stable, low-resistance contact, particularly to n-AlGaN used in high-temperature applications.
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