In this paper, we show that positive and negative charges can be injected into the surface of SiO(2)/Si(3)N(4)/SiO(2)/GaAs/AlGaAs heterostructure material by using a biased tip of a scanning probe microscope. Furthermore, the injected charges can be erased with the same tip once grounded, working in slow scan and contact mode. Surface potential measurements by quantitative analysis of Kelvin probe force microscopy after drawing and erasing charges at room temperature are presented and discussed.
Si x N y deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si 3 N 4 film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation.
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