Conversion of basal plane dislocations (BPDs) to threading edge dislocations in 8 and 4° offcut SiC material has been studied in order to eliminate the nucleation source of Shockley-type stacking faults in the active region of bipolar devices. Ex situ and in situ growth interrupts were used to convert BPDs in the 8° material, where conversion rates up to 98% were achieved for in situ interrupts in epilayers with doping < 1x10 16 cm -3 . Complete spontaneous conversion of BPDs was found to be possible in 4° offcut material after ~ 20 µm of epitaxial growth for both intentionally and unintentionally doped films.
Over the past decade, significant progress has been made in reducing the density of several extended and point defects within silicon carbide substrates and epitaxy. For instance, great success has been achieved in the elimination of micropipes and reductions in the lifetime killing point defect Z1/2. However, a wide-array of extended defects persist, ranging from various types of stacking faults and threading dislocations. An overview of the current status of these efforts is outlined here.
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