Structural phase changes in a titanium-silicon system treated by low energy high current elec tron beams (HCEBs) and compression plasma flows (CPFs) with the duration 100 µs and the energy density 12-15 J/cm 2 are studied. Scanning electron microscopy, X ray diffraction and electron microprobe analysis are used in this work. The formation of a titanium doped silicon layer 10-25 µm thick, titanium silicides (TiSi 2 under HCEBs and Ti 5 Si 3 under CPF treatment), silicon dendrites, and needle like eutectics (typical size of precipitates is about 50 nm) is revealed. It is shown via the results of numerical simulation that the thickness of the metal doped layer is mainly controlled by the power density value and the surface nonuni formity of the heat flow over the target surface. The thermodynamic regularities of phase formation are dis cussed, taking into account heat transfer between the silicide nuclei and solid silicon.
Thermal stability investigations of photovoltaic structures synthesized by the compression plasma flow treatment of doped silicon are performed. The samples are annealed in an atmosphere of nitro gen, in air or in vacuum in a temperature range of 100-900°C for 30 min or 3 h. The photovoltaic effect does not change after annealing at temperatures up to 600-700°C. It decreases 1.3-1.7 times after thermal annealing at a temperature of 900°C. The structure-phase changes of silicon treated with compression plasma flows are studied using X ray diffraction and scanning electron microscopy methods. It is established that a recrystallized pre surface layer with a thickness of 10-20 μm and modified (but not melted) layer with a thickness of up to 50-60 μm localized below the recrystallized layer are formed.
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