Structural and phase changes in single-crystalline silicon treated with compression plasma flows

Thermal stability of silicon photovoltaic structures produced using compression plasma flows

“…It was shown in [7] that an amorphous layer is not formed during the processing of (111) oriented silicon by compression plasma flows, and the type of conduc tivity on the surface of processed silicon changes from the hole to electron one. Since the fused layer has a rather large thickness (tens of micrometers), it is pos sible to conclude that indeed an amorphous phase is not formed in these samples.…”

“…We showed earlier that the effect of compression plasma flows on single crystal silicon leads to the appearance of the photovoltaic effect with a no load voltage of 450 mV in the latter [7]. In this work we study the thermal stability of silicon photovoltaic structures prepared during the processing of single crystal silicon by compression plasma flows, and also we propose the origin of the photovoltaic effect in sili con and its thermal stability.…”