A "reference cell" for generating radio-frequency (rf) glow discharges in gases at a frequency of 13.56 MHz is described. The reference cell provides an experimental platform for comparing plasma measurements carried out in a common reactor geometry by different experimental groups, thereby enhancing the transfer of knowledge and insight gained in rf discharge studies. The results of performing ostensibly identical measurements on six of these cells in five different laboratories are analyzed and discussed. Measurements were made of plasma voltage and current characteristics for discharges in pure argon at specified values of applied voltages, gas pressures, and gas flow rates. Data are presented on relevant electrical quantities derived from Fourier analysis of the voltage and current wave forms. Amplitudes, phase shifts, self-bias voltages, and power dissipation were measured. Each of the cells was characterized in terms of its measured internal reactive components. Comparing results from different cells provides an indication of the degree of precision needed to define the electrical configuration and operating parameters in order to achieve identical performance at various laboratories. The results show, for example, that the external circuit, including the reactive components of the rf power source, can significantly influence the discharge. Results obtained in reference cells with identical rf power sources demonstrate that considerable progress has been made in developing a phenomenological understanding of the conditions needed to obtain reproducible discharge conditions in independent reference cells.

Mechanical response of atomic layer deposition alumina coatings on stiff and compliant substrates J. Vac. Sci. Technol. A 30, 01A160 (2012) Development of an experimental technique for testing rheological properties of ultrathin polymer films used in nanoimprint lithography J. Vac. Sci. Technol. B 29, 061603 (2011) Structure and properties of nanocrystalline ZrNxOy thin films: Effect of the oxygen content and film thickness J. Vac. Sci. Technol. A 29, 031506 (2011) Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity A procedure for determining the residual stress in thin films using energy dispersive x-ray diffraction was investigated. The effect of the sputtering pressure on the residual stress in dc magnetron sputtered Ni films was studied in greater detail using this approach. The behavior reported suggested the possibility of controlling or influencing the sign and/or magnitude of the residual stress. In addition, the stress variation with increasing negative bias voltage is also presented. In the range studied, between Ϫ15 and Ϫ150 V, residual stress is always tensile.

No abstract

In this paper it is shown that the plasma sheath electric field in which the etch sample is immersed controls the anisotropy of the etching of polysilicon films. These films are on wafers supported by the grounded electrode of a diode plasma etch reactor. The sheath electric field at the wafer supporting electrode is modified either by changing the rf power delivered to the plasma, or, at constant rf power, by application of d-c voltage to the rf driven electrode, With similar consequences to the etch profiles. The absence of mask undercut and vertical etch walls characteristic of an anisotropic etch process are observed above a certain threshold power density-sheath electric field, while below this threshold, the profiles become progressively more undercut until they are equal to the etch depth, as expected ofisotropic etch processes. The experimental results presented in this paper, demonstrate these effects for a CC14 containing gas mixture at a total pressure of 65 Pa (0.5 Torr). A similar power density and pressure dependence of the etch anisotropy has been reported previously in different plasma etch gas under comparable conditions. These results will be shown to be explicable in terms of the increase in the anisotropy of the transport of ions for increasing sheath field. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-16 to IP Publication costs o] this article were assisted by the Perkin-Elmer Corporation.