Stress measurement in sputtered copper films on flexible polyimide substrates

Entenberg, A.; Lindberg, V. W.; Fletcher, K.; Gatesman, Andrew J.; Horwath, R. S.

doi:10.1116/1.574198

Cited by 21 publications

(4 citation statements)

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“…Thus, the possible incorporation of Ar in the films grown at low N2 percentages consistently explains the increase in hydrostatic strain and micro-strain, as well as the decrease of intrinsic tensile stress. It may also be noted these films display a much-voided structure along with a substantial increase in their surface roughness, which may also contribute to the decrease in intrinsic tensile stress, as reported in the case of zone 1 type sputtered metal films [67,68].…”

Section: Resultsmentioning

confidence: 65%

“…Hence, it is attributed primarily to the increase of Ar in the films, as the incorporation of extra atoms into grain boundaries is known [64] to relax the growth-related tensile stress. It may be noted that although there is a substantial increase in their surface roughness, these films display a much-voided structure, which may also contribute to the decrease in intrinsic tensile stress, as reported in the case of zone 1 type sputtered metal films [76,77].…”

Section: Discussionmentioning

confidence: 70%

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Microstructural dependence of residual stress in reactively sputtered epitaxial GaN films

Monish¹,

Major²

2021

J. Phys. D: Appl. Phys.

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Epitaxial GaN films were grown on c-sapphire by rf magnetron reactive sputtering of GaAs at different partial pressures of nitrogen in Ar–N2 sputtering atmosphere. High-resolution x-ray diffraction and φ-scans reveal the mosaic growth of c-axis oriented, wurtzite GaN films. The c and a parameters were independently determined to obtain the corresponding in-plane and out-of-plane strain components. Raman measurements confirmed the in-plane strain behavior. The surface morphology and elemental composition of films were studied by atomic force microscopy and secondary ion mass spectroscopy, respectively. High-resolution ω-2θ, ω, and in-plane φ-rocking curve scans were used to obtain micro-strain, screw and edge dislocation densities, respectively. The films grown at 30%–100% N2 reveal dominance of edge (∼1012 cm−2) over screw (∼1010 cm−2) dislocations, with both approaching similar densities at lower N2 percentages. The strain data has been analyzed to separate the hydrostatic and biaxial contributions and their dependences on N2 percentage. The film grown at 100% N2 displays large hydrostatic strain and micro-strain due to the presence of excess/interstitial nitrogen. The hydrostatic strain and micro-strain decrease substantially with initial decrease of N2 percentage, but increase slightly in the films grown below 30% N2, primarily due to the incorporation of Ar. The films grown below 75% N2 display growth-related intrinsic tensile stress, originating from crystallite coalescence. The stress reversal from tensile to compressive, seen in the films grown at higher N2 percentages is primarily attributed to the incorporation of excess/interstitial nitrogen into grain boundaries and the tensile side of edge dislocations. The decrease of intrinsic tensile stress in the films grown below 30% N2 is attributed to the incorporation of Ar and their voided structure.

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Section: Resultsmentioning

confidence: 65%

Section: Discussionmentioning

confidence: 70%

Microstructural dependence of residual stress in reactively sputtered epitaxial GaN films

Monish¹,

Major²

2021

J. Phys. D: Appl. Phys.

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“…This assumption was further supported by the increase in the convex curvatures of the Si substrates after the film deposition. Actually, the compressive stress was an intrinsic property of thin films sputtered at low plasma pressures where the bombardment of the high energy incident particles would distort the grain lattices [20]. The excess stress might be responsible for the increased coercivities in the thinner film (<35 nm) due to the introduction of additional anisotropic energy induced by the magnetostrictive nature of ferromagnetic transition metals [21].…”

Section: Resultsmentioning

confidence: 99%

Soft magnetic properties and high frequency permeability in [CoAlO/oxide] multilayer films

Ma¹,

Ong²

2007

J. Phys. D: Appl. Phys.

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A CoAlO thin film was found to have good soft magnetic properties and gigahertz frequency response when it had a thickness of tens of nanometres. Increasing the thickness by more than 100 nm rapidly increased the coercivity and seriously degraded the high frequency response. A multilayering technique (laminating the magnetic layer with oxide spacers) was exploited to improve the magnetic properties in thick films. AlOx and SiOx were used as the oxide spacing layers in this experiment. For the 105 nm CoAlO films, the easy and hard axis coercivities were reduced by more than 8 times by introducing 2 nm AlOx or 5 nm SiOx spacers. With our optimum lamination [CoAlO (52.5 nm)/AlOx (2 nm)]7, good soft magnetic properties (easy and hard axis coercivities: 21 and 14 Oe and effective anisotropy field: 54 Oe) and high frequency response (real permeability: >200 up to ∼2 GHz) were successfully obtained in a multilayer film at a thickness of 380 nm. The changes in the microstructures and film stress with the introduction of the oxide spacers are discussed in this paper.

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“…20) The intrinsic stress in the sputter-deposited Cu films is of the order of 10-10 2 MPa. 21,22) The intrinsic strains could provide such the energetic assistance to the room temperature grain growth in the Cu films bonded to the rigid substrates. If the strain exceeds the yield stress of the film, the strain in the film will be relaxed by several deformation (or strain relaxation) mechanisms which may operate simultaneously, and the strain relaxation mechanisms have dependence on the film microstructure.…”

Section: Discussionmentioning

confidence: 99%

The Effect of Strain Distribution on Abnormal Grain Growth in Cu Thin Films

Moriyama¹,

Matsunaga²,

Morita

et al. 2004

Mater. Trans.

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The effect of intrinsic strain on grain growth in Cu thin films was studied by both plan-view and cross-sectional scanning ion microscope in a focused ion beam system. Significant grain growth with bimodal grain size distribution was observed during room temperature storage in the Cu films which were deposited on the Si 3 N 4 substrates by a sputter-deposition technique. In the thick Cu films, a non-uniform grain size distribution was observed along a direction normal to the film surface: the large grains were observed at the location close to the substrate surface. This grain size distribution coincided with inhomogeneous strain distribution normal to the film surface. We concluded that the grain growth in the Cu thin films was facilitated by the strain intrinsic in the Cu films deposited on the rigid substrates, and that strain (or stress) introduced in the films was a primary factor to induce the grain growth in the Cu films at room temperature.

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Stress measurement in sputtered copper films on flexible polyimide substrates

Cited by 21 publications

References 0 publications

Microstructural dependence of residual stress in reactively sputtered epitaxial GaN films

Microstructural dependence of residual stress in reactively sputtered epitaxial GaN films

Soft magnetic properties and high frequency permeability in [CoAlO/oxide] multilayer films

The Effect of Strain Distribution on Abnormal Grain Growth in Cu Thin Films

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