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The pristine and Ni doped CdS polycrystalline thin films were grown on to glass substrates by Chemical Bath Deposition (CBD) method. The deposition bath contains cadmium chloride (as a source for cadmium ions), thiourea (as a source for sulfur ions), ammonium chloride, EDTA and ammonium hydroxide. The as prepared CdS films were annealed in air at 300 °C for 60 minutes and the as prepared films were characterized structural, morphological, elemental and electric properties. From XRD patterns, all the films exhibit hexagonal phase with (0 0 2) as preferential orientation and the estimated crystallite size were 29 nm and 18 nm for undoped and Ni doped CdS films. SEM images showed that the spherical like grains were formed in the films. Energy dispersive X-ray study confirmed the presence of Cd, S and Ni in the films. From the electrical studies, Ni doped CdS thin films carrier concentrations were increased with the increased Ni concentrations. The higher effective quantum efficiency (EQE) value is obtained for fabricated p-Si/n-Ni:CdS (Ni dopant at 0.08 M) hybrid heterojunctions photo detectors device. Those results could be applied in other CdS-based cells, for more effective PV and photo diode conversion device and other applications that require such properties.