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2017
DOI: 10.1007/s10854-017-7022-3
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Studies on Dilute Magnetic Semiconducting Co-Doped CdS Thin Films Prepared by Chemical Bath Deposition method

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Cited by 14 publications
(4 citation statements)
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“…As depicted in Figure S17, the full-survey-scan spectra illustrate the coexistence of C, N, Cd, and I elements in Cd-MOF , and the O element is newly emerged from the survey spectrum of Cd-MOF-PO . In the high-resolution spectra of Cd 3d, the double peaks at 405.17 and 411.88 eV could be assigned to 3d 5/2 and 3d 3/2 spin-orbit splits of the Cd­(II) oxidation state, respectively (Figure c) . With the attack of the oxygen atom of PO to the Cd­(II) center, the large electronegativity of O (χ O = 3.44) increases the electronic cloud density around Cd­(II), leading to slight shifts of binding energy from 405.17 to 405.28 eV and 411.88 to 412.05 eV .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…As depicted in Figure S17, the full-survey-scan spectra illustrate the coexistence of C, N, Cd, and I elements in Cd-MOF , and the O element is newly emerged from the survey spectrum of Cd-MOF-PO . In the high-resolution spectra of Cd 3d, the double peaks at 405.17 and 411.88 eV could be assigned to 3d 5/2 and 3d 3/2 spin-orbit splits of the Cd­(II) oxidation state, respectively (Figure c) . With the attack of the oxygen atom of PO to the Cd­(II) center, the large electronegativity of O (χ O = 3.44) increases the electronic cloud density around Cd­(II), leading to slight shifts of binding energy from 405.17 to 405.28 eV and 411.88 to 412.05 eV .…”
Section: Resultsmentioning
confidence: 99%
“…In the high-resolution spectra of Cd 3d, the double peaks at 405.17 and 411.88 eV could be assigned to 3d 5/2 and 3d 3/2 spin-orbit splits of the Cd(II) oxidation state, respectively (Figure 4c). 67 With the attack of the oxygen atom of PO to the Cd(II) center, the large electronegativity of O (χ O = 3.44) increases the electronic cloud density around Cd(II), leading to slight shifts of binding energy from 405.17 to 405.28 eV and 411.88 to 412.05 eV. 68 Meanwhile, two deconvolution peaks are recognized at 406.63 and 413.66 eV in the Cd 3d XPS spectrum of Cd-MOF-PO.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The decrease in band gap when CdS deposited on ZnS and CoS could be due to strain and increase in the grain size as shown in SEM micrograph of CdS/ZnS and CdS/CoS films (Figure 2) [43,44]. In the case of CdS/CoS, the band gap decrease can also be resulted from the substitution of some of the Cd ions specially at the interface region by relatively larger atomic radius Co ions [45].…”
Section: Optical Propertiesmentioning
confidence: 95%
“…It has a high absorption coefficient, good transfer efficiency, reliable, and inexpensive [1]. CdS considered as interesting material because it used at different applications for instance diode sensor [2], transistor [3], photosensor [4], photodetectors [5], photodiodes [6]. CdS have been deposited by chemical bath deposition (CBD) method [7], sol-gel [8], pules laser deposition technique (PLD) [9], chemical vapour deposition (CVD) [10], RF-sputtering [11].…”
Section: Introductionmentioning
confidence: 99%