This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of these High-k metal gate 28 nm CMOS was analyzed on large signal conditions in class A operation. The maximal drain voltage withstanding was determined for various topologies. Transistors behavior was analyzed for optimal load impedance condition in terms of microwave output power and power added efficiency. Finally, a comparison with the standard 45 nm CMOS was achieved.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.