High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations and mobilities of these CdS NBs are around (1.0×1016–3.0×1017)∕cm3 and 100–350cm2∕Vs, respectively. An on-off ratio greater than 108 and a subthreshold swing as small as 65mV∕decade are obtained at room temperature, which give the best performance of CdS nanowire/nanobelt FETs reported so far. n-type CdS NB∕p+-Si heterojunction light emitting diodes were fabricated. Their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions.
We have fabricated depletion and enhancement modes (D-mode and E-mode) back-gate metal-insulator-semiconductor field-effect-transistors (MISFETs), using two kinds of ZnO nanowires (NWs) labeled as A and B, respectively. The NWs A and B were synthesized via the vapor phase transport method with ZnO∕C admixture and Zn as the sources, respectively. Each of the MISFETs has a top Ω shaped Au contact on the conductive channel. Compared to that without any top Au contact, the on/off ratio (∼106) of the ZnO NW A MISFET increases by a factor of 103, and is the highest one among the back-gate ZnO NW MISFETs ever reported; while the ZnO NW B MISFET changes from D-mode to E-mode when a top Au contact is added. The effects of the Au∕ZnO NW contacts on the performances of the NW A and B MISFETs were discussed.
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