Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices

Abstract

High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations and mobilities of these CdS NBs are around (1.0×1016–3.0×1017)∕cm3 and 100–350cm2∕Vs, respectively. An on-off ratio greater than 108 and a subthreshold swing as small as 65mV∕decade are obtained at room temperature, which give the best performance of CdS nanowire/nanobelt FETs reported so far. n-type CdS NB∕p+-Si heterojunction light emitting diodes were fabricated. Their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions.

Polarized photoluminescence and time-resolved photoluminescence from single CdS nanosheets

“…[1][2][3][4][5][6][7][8][9] NSs now form the basis for a number of optoelectronic devices including field effect transistors and light emitting diodes. 1,5,6,9 The rapid development of applications for NSs, including CdS NSs, indicates that even more striking uses for these novel nanostructures might be possible if growth conditions were optimized and their electronic states and structural symmetries understood.…”

One-dimensional embedded cluster approach to modeling CdS nanowires

“…82 Similar results for photoactivity and photoconductivity, showing evidence of deep defect levels, have been observed in In-doped CdS nanoribbons 83 and nanowires. 84 It has been found, however, from optical transmission measurements on CdS thin films 85 and conductivity and electroluminescence measurements on CdS nanobelt-based field-effect transistors, 86 that In acts as a shallow donor, with no deep levels in the gap. Theoretical and computational studies on such systems are required in order to elucidate the exact role of the substitutional defect, as well as the stability of charge carriers with respect to the formation of charge-compensating intrinsic point defects.…”

Self-assembly and alignment of semiconductor nanoparticles on cellulose nanocrystals

“…Semiconducting materials such as cadmium sulfide (CdS), lead sulfide (PbS), and zinc sulfide (ZnS) have applications in solar cells, optoelectronic, and electronic devices [15][16][17][18][19]. CdS and ZnS are II-VI semiconducting materials with band gaps of 2.42 and 3.7 eV, respectively.…”

“…CdS and ZnS are II-VI semiconducting materials with band gaps of 2.42 and 3.7 eV, respectively. The CdS band gap falls within the visible spectrum and can be used in the form of nanowires, nanotubes, and quantum dots for nonlinear optical devices, photovoltaic cells, and thin film transistors [19][20][21]. ZnS is a photoluminescent material and has field emission properties, with potential applications in light converting electrodes, ultraviolet light emitting diodes, or phosphors in cathode ray tubes [21][22][23][24].…”