We demonstrate a passively mode-locked diode-pumped thin-disk Yb:YAG laser generating 810-fs pulses at 1030 nm with as much as 60 W of average output power (without using an amplifier). At a pulse repetition rate of 34.3 MHz, the pulse energy is 1.75 microJ and the peak power is as high as 1.9 MW. The beam quality is close to the diffraction limit, with M2 < 1.1.

We demonstrate a passively Q-switched fiber laser system generating pulses with as much as 0.1 mJ of pulse energy at 1.53 mum and a >1-kHz repetition rate. These results were achieved with a simple master oscillator-power amplifier scheme with a single pump source, realized with large-mode-area fiber and multiple reflections upon a semiconductor saturable-absorber mirror.

Abstract-A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs/GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22-ps fullwidth at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz.

We have developed optically pumped passively mode-locked vertical-external-cavity surface-emitting lasers. We achieved as much as 950 mW of mode-locked average power in chirped 15-ps pulses, or 530 mW in 3.9-ps pulses with moderate chirp. Both lasers operate at a repetition rate of 6 GHz and have a diffraction-limited output beam near 950 nm. In continuous-wave operation, we demonstrate an average output power as high as 2.2 W. Device designs with a low thermal impedance and a smooth gain spectrum are the key to such performance. We discuss design and fabrication of the gain structures and, particularly, their thermal properties. Index Terms-Mode locking, pulse generation, semiconductor lasers, thermal effects in lasers.

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