We study the Fermi surface of Bi2Sr2CaCu2O8 using angle resolved photoemission spectroscopy (ARPES) with a momentum resolution of approximately 0.01 of the Brillouin zone. We show that, contrary to recent suggestions, the ARPES derived Fermi surface is a large hole barrel centered at (pi,pi), independent of the incident photon energy. We caution that the photon energy and k dependence of the matrix elements, if not properly accounted for, can lead to misinterpretation of ARPES intensities.
Homologous series are layered phases that can have a range of stoichiometries depending on an index n. Examples of perovskite-related homologous series include (ABO3)nAO Ruddlesden–Popper phases and (Bi2O2) (An−1BnO3n+1) Aurivillius phases. It is challenging to precisely control n because other members of the homologous series have similar stoichiometry and a phase with the desired n is degenerate in energy with syntactic intergrowths among similar n values; this challenge is amplified as n increases. To improve the ability to synthesize a targeted phase with precise control of the atomic layering, we apply the x-ray diffraction (XRD) approach developed for superlattices of III–V semiconductors to measure minute deviations from the ideal structure so that they can be quantitatively eradicated in subsequent films. We demonstrate the precision of this approach by improving the growth of known Ruddlesden–Popper phases and ultimately, by synthesizing an unprecedented n = 20 Ruddlesden–Popper phase, (ATiO3)20AO where the A-site occupancy is Ba0.6Sr0.4. We demonstrate the generality of this method by applying it to Aurivillius phases and the Bi2Sr2Can–1CunO2n+4 series of high-temperature superconducting phases.
Electric-field gradients on mercury sites of the HgBa 2 CuO 4ϩ␦ high-T c superconductor were measured with the perturbed angular correlation technique and interpreted with ab initio calculations. Under oxygen annealing, an asymmetric electric-field gradient has been assigned to the presence of single oxygen atoms, O ␦ , which are located in the Hg planes. These experiments provide an atomic scale tool for studying charge-density variations occuring in the neighborhood of the Hg atoms, which can be induced, particularly, by pointlike defects.
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