“…Advances in oxide thin film deposition processes and, in particular, in oxide molecular beam epitaxy (O-MBE) techniques [ 1 , 2 , 3 , 4 , 5 ] allowing atomic-scale thickness control, abrupt interfaces, and the possibility to change the chemical composition over a distance of a single-unit cell, have given a fundamental burst to the study of the low-dimensional effects in oxide-based heterostructures [ 6 , 7 , 8 , 9 ], allowing the fabrication of these systems with performances comparable to those of the best conventional semi-conductor devices. In particular, several oxide-based quantum-well (QW) systems, where a thin conducting oxide is sandwiched between two layers of insulating oxide material, such as SrTiO 3 /SrVO 3 /SrTiO 3 , GdTiO 3 /SrTiO 3 /GdTiO 3 , SrVO 3 /SrTiO 3 /SrVO 3 , and SmTiO 3 /SrTiO 3 /SmTiO 3 [ 10 , 11 , 12 , 13 , 14 ], have been fabricated and studied.…”