Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. etal-oxide (MO) semiconductors, especially in amorphous phases, represent an appealing materials family for next generation electronics owing to their high carrier mobilities, good environmental/thermal stability, mechanical flexibility, and excellent optical transparency (1-3). MO films complement organic semiconductors (4, 5), carbon/oxide nanomaterials (6), and flexible silicon (7, 8) for enabling new technologies, such as flexible displays and printed sensors. For fabricating high-performance electronics with acceptable fidelity, conventional processes require capital-intensive physical/chemical vapor deposition techniques. Capitalizing on the solubility of MO precursors in common solvents, solution methods have been used to fabricate semiconducting MO layers for thin-film transistors (TFTs). However, the fabrication process and field-effect mobilities of these TFTs are not competitive with the corresponding vapor-deposited (e.g., sputtered) devices (9), and developing routes to solution-derived MO TFTs with technologically relevant thicknesses and performance comparable to state of the art vapor-deposited devices is a critical milestone for MO electronics evolution.Sol-gel techniques are used extensively for MO film growth, including films for high-performance TFTs (10-13). However, the required sol-gel condensation, densification, and impurity removal steps typically require >400-500°C processing temperatures, which are incompatible with inexpensive glasses and typical flexible plastic substrates (14). Progress toward significantly reducing the processing temperatures of sol gel-derived MO films has afforded excellent TFT mobilities; however, achieving both reproducible high-performance and stable device operation remains an unsolved issue for Ga-containing materials (15). Sol-gel on-a-chip for indium-zinc-oxide (3) and deep-UV ...

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Exploring the WEP with a pulsed cold beam of antihydrogen View the table of contents for this issue, or go to the journal homepage for more 2012 Class. Quantum Grav. 29 184009

The working mechanisms of excitonic solar cells are strongly dominated by interface processes, which influence the final device efficiency. However, it is still very challenging to clearly track the effects of inter-molecular processes at a mesoscopic level. We report on the realization of polymer-based hybrid solar cells made of prototypical materials, namely, poly(3-hexylthiophene) (P3HT) finely infiltrated in a TiO 2 scaffold, with power conversion efficiency exceeding 1%. A step-change improvement in the device performance is enabled by engineering the hybrid interface by the insertion of an appropriate molecular interlayer. An unprecedented set of characterization techniques, including time-resolved optical spectroscopy, X-ray photoemission spectroscopy, positron annihilation spectroscopy and atomistic simulations, allows us to rationalize our findings. We show that a suitable chemical structure of the interlayer molecule induces selective intermolecular interactions, and thus a preferential surface energetic landscape and morphological order at the interface which consequently drives a strong improvement in charge generation and a decrease in recombination losses.

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