In this paper, a one-dimensional physical model with thermally dependent parameters of the Trench Insulated Gate Bipolar Transistor (TIGBT) is presentod. This model is implemented in the Saber simulator in MAST language. Simulation and experinental results are compared for different temperatures in order to validate the model in adiabatic conditions. I ISBN 90-751S08-1 HI U2005-Ddc P.I 2 LOB 2005 -Dresden 0.2 A acw Treiicii lCjBT disuibuted modc,-l widi diermo-sciisiblc,-pamai=rs. LLGSELUOLANI M\ohluned DEl 2005 -L)i--;c11i ISBN :90-75815-08-5 i,.2 LOB 2005 -Dresden P.12 A acw Treiicii lCjBT disuibuted modc,-l widi diermo-sciisiblc,-pamai=rs. LLGSELUOLANI M\ohluned DEl 2005 -L)i--;c11i ISBN :90-75815-08-5 I1. 1'5
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