A trench IGBT distributed model with thermo-sensible parameters

Abstract

In this paper, a one-dimensional physical model with thermally dependent parameters of the Trench Insulated Gate Bipolar Transistor (TIGBT) is presentod. This model is implemented in the Saber simulator in MAST language. Simulation and experinental results are compared for different temperatures in order to validate the model in adiabatic conditions. I ISBN 90-751S08-1 HI U2005-Ddc P.I 2 LOB 2005 -Dresden 0.2 A acw Treiicii lCjBT disuibuted modc,-l widi diermo-sciisiblc,-pamai=rs. LLGSELUOLANI M\ohluned DEl 2005 -L)i--;c11i ISBN :90-75815-08-5 i,.2 LOB 2005 -Dresden P.12 A acw Treiicii lCjBT disuibuted modc,-l widi diermo-sciisiblc,-pamai=rs. LLGSELUOLANI M\ohluned DEl 2005 -L)i--;c11i ISBN :90-75815-08-5 I1. 1'5

Simulation based analysis of a monolithically integrated fast and slow IGBT structure (U)

“…An in depth description of the semiconductor modeling methodology used in this paper has been already presented and validated for PiN diode and IGBT in [2][3][4][5]. The accuracy of the charge carriers profile stored in the lightly doped central region − N is highly improved thanks to an original ambipolar diffusion equation resolution technique [6].…”

The Bi-IGBT: a low losses power structure by IGBT parallel association

“…The methodology used for semiconductor modeling has already been presented and validated for PiN diodes and IGBTs in the literature [3][4][5]. Basically, it consists of the definition of electrically and/or physically separated regions of the semiconductor device.…”

“…These three variables link the carrier dynamics with the rest of the whole component model. Moreover, avalanche effect and latch-up phenomenon are also taken into account in the model, and temperature-dependent physical parameters allow describing the thermal effects within the semiconductor [4,5]. All the semiconductor models are implemented under the Saber R circuit simulator using the MAST language [7].…”