The passivation of GaAs(100) by Se has been achieved in a controlled manner. Results provided by synchrotron radiation photoelectron spectroscopy show that the extent of Se bonding to As and degree of band bending can be systematically controlled by varying the GaAs substrate temperature during Se exposure. Furthermore, the formation of Ga vacancies is also found to depend on substrate temperature.
The chemical bonding and surface segregation of the Pd/Selenium-passivated GaAs interface is monitored by synchrotron radiation photoemission spectroscopy (SRPES). Pd deposition on GaAs(100) and (111)A is accompanied by Se segregation into the Pd overlayer preventing As segregation. Moreover, Se atoms are found to remain at the Pd/GaAs(111)B interface and may play a role in suppressing GaAs substrate disruption during metal deposition.
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