In recent. years bipolar transistors with current ratings from '200 A to 1000 A have become available. The paper analyses the modelling of these devices by using an approach based upon tlie physical mechanisms in tlie device, in contrast to the many curve-fitting approaches found in this field. It is shown that, sufficient sta.tic iiiodelling can be achieved by a minimum n u m l~r of parameters easily determined experinient~ally.Exist.ing modelling, developed for low current. devices, such a.s tlie Gumniel-Poon, are exa.mined and a survey of the literature given. The funda,niental assumptions for high current modelling are derived, the second order effects examined and the dominant mechanisms for dc operation derived by a detailed experimental investigation. It. is shown that the Hower model is the most suitable a.pproach for high current bipolar transist.ors i n quasi-satumtion.The findings of t,he work are all incorimrated into a new iniproved inodel and foriiiulated int.0 the SPICE nct.work siniulU.ion programme. It is shown conclusively, by comparison of siiiirilat.ion and rxperiment, that, the devclopcd physically device based approach. niodels tlie behaviour of power devices in swit.ches adcquat ely over a wide rangc of operat ing contlit ions for converter sinidation.
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