Pulsed transformer base drives for high-efficiency high-current low-voltage switches

Prest, R.B.; Wyk, J.D. van

doi:10.1109/63.4343

Cited by 20 publications

(1 citation statement)

References 13 publications

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“…The best way to achieve small size and high efficiency is to remove the resistors in the base circuit (Prest and Van Wyk 1988), omitting any feedback path from the collector, and provide the capability of the proportional drive without any limitation on the maximum ON-state period. To achieve these goals, the authors previously proposed a simple base drive scheme for power transistors using a high-frequency zero voltage switching (ZVS) converter (Kim et al 1991).…”

Section: Introductionmentioning

confidence: 99%

Small, highly efficient current-source type base drive circuit using ZVS converters

Kim

Cho

1994

International Journal of Electronics

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New current-source type base drive schemes are proposed using high frequency converters with zero voltage switching. Using these drives, the performance of a switching bipolar power transistor is enhanced: the transistor can be lightly saturated in accordance with the load condition because its base current can easily be controlled. The proposed circuits are very small and the efficiencies are higher than for conventional circuits. These base drive schemes are also easily extendable to drive multiple power transistors.

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Section: Introductionmentioning

confidence: 99%

Small, highly efficient current-source type base drive circuit using ZVS converters

Kim

Cho

1994

International Journal of Electronics

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Power Electronic Converters for Drives

Wyk¹

1996

Power Electronics and Variable Frequency Drives

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A novel isolated, compensated darlington base‐drive configuration

Enslin

1995

Int Trans Elec Energy Syst

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This paper will introduce a new isolated version of the compensated base drive for high‐power bipolar transistor switches. A unique pulse transformer is used to drive a high‐power bipolar transistor by means of a compensated Darlington pair. This Darlington pair consists of an insulated gate bipolar driving transistor (IGBT) and a high‐current single bipolar transistor. In high‐efficient, high‐power bridge applications of high‐current switches, the saturation voltage should be ultra‐low, which implies a high‐power bipolar transistor in deep saturation. This isolated base‐drive circuit is described and evaluated in these applications.

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Pulsed transformer base drives for high-efficiency high-current low-voltage switches

Cited by 20 publications

References 13 publications

Small, highly efficient current-source type base drive circuit using ZVS converters

Small, highly efficient current-source type base drive circuit using ZVS converters

Power Electronic Converters for Drives

A novel isolated, compensated darlington base‐drive configuration

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