The Schottky barriers formed on n-ZnS and n-ZnSe by polymeric sulfur nitride have been compared to barriers formed by Au. Barrier energies as determined by photoresponse, current-voltage, and capacitance· voltage methods show that (SN). is approximately 1.0 eV higher than Au on n-ZnS and 0.3-0.4 eV higher than Au on n-ZnSe. We believe that this is the first report of any metallic contact more electronegative than Au.
Gold contacts to most III-V and II-VI compounds position the Fermi level at the interface well into the energy gaps of the semiconductors. To position the Fermi level closer to a conduction-band edge, particularly in the more ionic semiconductors, one may substitute a more electropositive element like AI for the Au contact. To position the Fermi level closer to a valence-band edge, however, there are no further possibilities among the elemental metals, since Au is the most electronegative of these. Two contact materials, (SN)x and HgSe, which overcome this limitation have recently been reported. Barriers produced by these contacts on many compound semiconductors will be reported and shown to exhibit the well-known ionic-covalent transition. Device use and suggestions for further research are mentioned.
An investigation was made of novel domain wall structures in (100) SmTmCaGe garnet films. These (100) oriented films have strong in-plane anisotropy resulting in the formation of Néel type domain walls in spite of the large thickness (∼1 μm) of the films. The dipolar nature of these walls was detected by use of a modified Bitter technique in which a bias field polarized the magnetic particles perpendicular to the film plane. Line transitions separating antiparallel domain wall segments were observed to move along the walls when appropriate polarity in-plane fields were applied. These line transitions are analogous to the Bloch point and crosstie observed in NiFe films. In the garnet films, however, anisotropy is stronger, and because the magnetization is much weaker, the crosstie does not form. Theoretical considerations suggest that the Néel wall has a width of about 1500 Å and that alternate line transitions, having different magnetization configurations, are nearly identical in width (∼600 Å) and energy. Furthermore, since the magnetization is low, there is little interaction between line transitions and they may be relatively densely packed along the Néel wall.
Correlation between Schottky barrier heights on compound semiconductors and metal and semiconductor electronegativities J. Appl. Phys. 52, 5702 (1981); 10.1063/1.329508 Shear transformation to produce a new phase of polymeric sulfur nitride (SN) x J. Chem. Phys. 66, 401 (1977); 10.1063/1.433933 Schottky barriers on compound semiconductors: The role of the anion J. Vac. Sci. Technol. 13, 802 (1976); 10.1116/1.568993Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride Schottky barriers produced by polymeric sulfur nitride, (SN)x' on nine common III-V and II-VI compound semiconductors are compared to barriers formed by Au. The conductor (SN)x produces significantly higher barriers to n -type semiconductors and lower barriers to p -type semiconductors than Au, the most electronegative elemental metal. The barrier height improvement, defined as 1(SN)x -(Au)l, is smaller on covalent semiconductors than on ionic semiconductors; (SN)x barriers follow the ionic-covalent transition. Details of (SN)x film deposition, sample preparation, and barrier height measurements are described.
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