The Schottky barriers produced by polymeric sulfur nitride on compound semiconductors

Abstract

Correlation between Schottky barrier heights on compound semiconductors and metal and semiconductor electronegativities J. Appl. Phys. 52, 5702 (1981); 10.1063/1.329508 Shear transformation to produce a new phase of polymeric sulfur nitride (SN) x J. Chem. Phys. 66, 401 (1977); 10.1063/1.433933 Schottky barriers on compound semiconductors: The role of the anion J. Vac. Sci. Technol. 13, 802 (1976); 10.1116/1.568993Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride Schottky barriers produced by polymeric sulfur nitride, (SN)x' on nine common III-V and II-VI compound semiconductors are compared to barriers formed by Au. The conductor (SN)x produces significantly higher barriers to n -type semiconductors and lower barriers to p -type semiconductors than Au, the most electronegative elemental metal. The barrier height improvement, defined as 1<I>(SN)x -<I>(Au)l, is smaller on covalent semiconductors than on ionic semiconductors; (SN)x barriers follow the ionic-covalent transition. Details of (SN)x film deposition, sample preparation, and barrier height measurements are described.

New alkaline-earth amidosulfates and their unexpected decomposition to S4N4

“…Moreover, our described synthetic approach demands far less elaborate conditions as M(NH 2 SO 3 ) 2 •xH 2 O precursors can be handled without an inert atmosphere or dry solvents. This finding will hopefully help to pave the way for the application of some of the many materials that can be synthesised from S 4 N 4 , 84 like polythiazyl (SN) x , which is of great interest for a range of electrical [85][86][87][88][89][90][91][92][93] as well as forensic 94,95,96 applications, by providing a method for the in situ generation of the explosive starting material S 4 N 4 for potential one-pot syntheses.…”