Highly electronegative contacts to compound semiconductors

Abstract

Gold contacts to most III-V and II-VI compounds position the Fermi level at the interface well into the energy gaps of the semiconductors. To position the Fermi level closer to a conduction-band edge, particularly in the more ionic semiconductors, one may substitute a more electropositive element like AI for the Au contact. To position the Fermi level closer to a valence-band edge, however, there are no further possibilities among the elemental metals, since Au is the most electronegative of these. Two contact materials, (SN)x and HgSe, which overcome this limitation have recently been reported. Barriers produced by these contacts on many compound semiconductors will be reported and shown to exhibit the well-known ionic-covalent transition. Device use and suggestions for further research are mentioned.

New alkaline-earth amidosulfates and their unexpected decomposition to S4N4

“…Moreover, our described synthetic approach demands far less elaborate conditions as M(NH 2 SO 3 ) 2 •xH 2 O precursors can be handled without an inert atmosphere or dry solvents. This finding will hopefully help to pave the way for the application of some of the many materials that can be synthesised from S 4 N 4 , 84 like polythiazyl (SN) x , which is of great interest for a range of electrical [85][86][87][88][89][90][91][92][93] as well as forensic 94,95,96 applications, by providing a method for the in situ generation of the explosive starting material S 4 N 4 for potential one-pot syntheses.…”

Interaction potential models for bulk Zns, Zns nanoparticle, and Zns nanoparticle‐PMMA from first‐principles

“…Polarizable force‐fields account for appropriate changes in charge distributions. Based on the electronegativity values of S and Zn atoms S is more polarizable than Zn in ZnS . Hence, we introduced polarization of S in our potential model using a polarizable core‐shell model .…”

Ohmic Contacts to ZnSe-Based Materials

“…Capacitance-voltage and photoresponse measurements from these samples indicated that HgSe formed Schottky barriers that were -0.5 eV larger than those formed by Au. As a result of the high a, on n-type semiconductors, Scranton et al 57 proposed that one possible application for the HgSe contacts was low a, contacts to p-type semiconductors (which was speculated could lead to ohmic contacts).…”