Chromium nitride films were deposited on glass substrates using reactive dc planar magnetron sputtering. Film stress-state evaluation permitted a two-level classification into compressive and transition categories. Maximum stress levels in these compressive category films were in the (−) 0.83 to (−) 14.4 GPa range. Sputtering parameter weighting equations indicated the deposition parameters which influenced stress were sputtering pressure, sputtered flux incidence angle, film thickness, and the interactions between these parameters. Subsequent studies indicated substrate bias to be important in the −50 to −250 V interval. Thermal stresses contributed a compressive component of (−) 0.7 GPa which was approximately 4% of the peak compressive stress. Generally, deposition conditions promoting high normalized energies (energetic particle bombardment of the film) produced hard coatings which were highly stressed (compressive) with low resistivities.

The high sensitivity of photoconductive techniques is exploited to study the central cell structure on the extrinsic donor spectra of pure n-type epitaxial films of GaAs. Experiments with back-doped samples have enabled the chemical shifts of most of the common donors to be determined with some confidence. The residual contaminants are identified in material from different sources prepared without intentional doping by conventional vapour and liquid phase techniques and by the recently developed 'alkyl' vapour epitaxial process. Each growth process produces a different set of residual contaminants, but samples grown by the same technique in different laboratories have a very similar donor spectrum.

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