ABSTRACT. TiO 2 thin films were prepared by pulse laser deposition technique on glass substrates with laser power 700 mJ and 900 shot at distance 1cm under vacuum of 10 -2 mbar with different annealing temperature (273, 373, 423)K. The influences of the annealing temperature on the optical properties of TiO 2 thin films were mainly investigated. TiO 2 is a wide band gap n-type semiconductor that has a wide range of applications. It was found that the optical properties of TiO 2 thin films were dependent on the annealing temperature. The values of optical energy gap decreases from (3.4 to 3.2) eV when increasing annealing temperature. The optical constants such as refractive index, extinction coefficient, real and imaginary dielectric constants as a function of wavelength were determined.

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Thermal evaporation method have been used to prepared thin films from tin sulfide (SnS) doping with 20 nm particle size of silver (Ag) at room temperature, under pressure up to 1 × 10-7 mbar with rate of statement 0.5 nm. sec-1. The SnS:Ag thin films deposited on glass substrate at different annealing temperature (as-deposited, 423, 473, 573 and 623 K) for 2 hours. The effect of annealing treatment on the structural and optical properties has been studied. From X- ray diffraction (XRD) examination, predominant peak (111) appears at annealing temperature 623 K, also the others as (101) and (002). Scherer’s formula used to calculate the crystallite size that ranged from 3-7 nm. Using UV-Vis spectrophotometer to recording the transmittance spectra and then calculate the optical properties in the wavelength range 300-900 nm. The absorbance decreased with the increasing of annealing temperature, while the transmittance increased. The optical constants such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant, and absorption coefficient decreased with the increasing of annealing temperature. The energy band gap increased from 2.1 eV for the as- deposited film to 3.3 eV for the film annealed at 623 K.

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TiO2 thin films were prepared by pulse laser deposition technique on glass substrates with laser power 700 mJ and 900 shot at distance 1cm under vacuum of 10-2 mbar with different annealing temperature (273, 373, 423)K. The influences of the annealing temperature on the optical properties of TiO2 thin films were mainly investigated. TiO2 is a wide band gap n-type semi-conductor that has a wide range of applications. It was found that the optical properties of TiO2 thin films were dependent on the annealing temperature. The values of optical energy gap decreases from (3.4 to 3.2) eV when increasing annealing temperature. The optical constants such as refractive index, extinction coefficient, real and imaginary dielectric constants as a function of wavelength were determined.