Infrared transparent and conductive coatings (ITCCs) are in significant demand in infrared imaging applications. The combination of high optical transparency in infrared range (1-12 μm) and high electrical conductivity, however,...
Developing high-performance, uncooled mid-wavelength
infrared (MWIR)
detectors is a challenging task due to the inherent physical properties
of materials and manufacturing technologies. In this study, we designed
and manufactured an uncooled polycrystalline PbSe/CdSe heterojunction
photovoltaic (PV) detector through vapor physical deposition. The
resulting 10 μm × 10 μm device exhibited a peak detectivity
of 7.5 × 109 and 3 × 1010 cm·Hz1/2·W–1 at 298 and 220 K, respectively,
under blackbody radiation. These values are comparable to those of
typical PbSe photoconductive detectors fabricated through standard
chemical bath deposition. Additionally, the sensitization-free process
used to create these PbSe/CdSe PV detectors allows for high replicability
and yield, making them promising candidates for low-cost, high-performance,
uncooled MWIR focal plane array imaging in commercial applications.
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