Study on the Theoretical Limitation of the Mid-Infrared PbSe N<sup>+</sup>-P Junction Detectors at High Operating Temperature

Abstract

This paper provides a theoretical study and calculation of the specific detec-

Low-cost uncooled MWIR PbSe quantum dots photodiodes

“…Third, photovoltaic detectors need smaller offset voltage in comparison with its PC counterpart, reducing the weight and power. Since its performance is far below the theoretical limit of Auger recombination, 52 there is large room to improve the performance of CdS/PbSe photovoltaic detectors.…”

Photoconductive PbSe thin films for infrared imaging

“…Among group II-VI, the HgCdTe (MCT) thin film is a premium material for high-performance photodetectors in the NIR-LWIR range due to its tunable bandgap over a wide spectral range, high absorption coefficient, high carrier mobility, and long carrier lifetime. [161][162][163] However, it has some major drawbacks such as the most expensive material, FPA integration with SOIC due to large lattice mismatch with Si, requires cryogenic cooling leads to a bulky system, low dark current density, and requires advanced plasma dry etching technology leads to severe manufacturing costs. 122,161,163,164 High carrier lifetimes lead to a high gain but reduce quantum efficiency.…”

“…161 It has deficient performance at higher operating temperatures due to a high Auger recombination rate, which leads to increased loss, otherwise known as Auger theoretical limit. 162 Recently, new improvements are reported to fabricate FPA by using MCT QDs for infrared photodetection. MCT QD-based photodetectors could be a potential candidate due to their negative bandgap E g = À0.15 eV and large Excitonic Bohr radius, which ensures the quantum confinement effect at the desired spectral range.…”

“…142 Northrop Grumman reported monolithic PbSe detector integrated FPA with Si ROIC including thermoelectric cooling for photonic and uncooled IR imaging applications. 162 The Centro de Investigación y Desarrollo de la Armada (CIDA) reported an innovative technology for processing polycrystalline PbSe thin film which offers good reproducibility, good uniformities, long term stability, plain Si substrates (no textured) compatibility, compatibility with existing Si CMOS technology, simple and affordable, compatible with complex multilayer structures (interference filters), and imaging device monolithically integrated with ROIC for FPA imaging. 142 The PbSe materials limitation such as flicker noise and high dielectric constant can be minimized by using a specific ROIC and the processing capabilities of advanced nanoelectronics.…”

Enhanced performance in uncooled n-CdSe/p-PbSe photovoltaic detectors by high-temperature chloride passivation

“…16 MBE PbSe epitaxial lms grown on silicon substrates have attracted more attention for large format FPA uncooled imaging applications, not only due to their large area uniformity and integration ability with Si wafer, but also extended photosensitive wavelength to long-IR range (8-12 mm) by Sn doping. [17][18][19][20] Based on these advantages, Shi explored an n-CdS/p-PbSe heterojunction device conguration by combining the CBD and MBE technologies. 17 However, the device performance is lower than both the theoretical limit and the PbSe PC detectors' performances, which is limited by high Shockley-Read Hall recombination associated with high dislocation density (>10 8 cm 2 ) and high carrier concentration (typical 5 Â 10 17 cm À3 ) caused by large mismatch in lattice constant and coefficient of thermal expansion between lead-salt lms and Si substrates.…”