Single-crystal
(SC) perovskite is currently a promising material
due to its high quantum efficiency and long diffusion length. However,
the reported perovskite photodetection range (<800 nm) and response
time (>10 μs) are still limited. Here, to promote the development
of perovskite-integrated optoelectronic devices, this work demonstrates
wider photodetection range and shorter response time perovskite photodetector
by integrating the SC CH3NH3PbBr3 (MAPbBr3) perovskite on silicon (Si). The Si/MAPbBr3 heterojunction photodetector with an improved interface exhibits
high-speed, broad-spectrum, and long-term stability performances.
To the best of our knowledge, the measured detectable spectrum (405–1064
nm) largely expands the widest response range reported in previous
perovskite-based photodetectors. In addition, the rise time is as
fast as 520 ns, which is comparable to that of commercial germanium
photodetectors. Moreover, the Si/MAPbBr3 device can maintain
excellent photocurrent performance for up to 3 months. Furthermore,
typical gray scale face imaging is realized by scanning the Si/MAPbBr3 single-pixel photodetector. This work using an ultrafast
photodetector by directly integrating perovskite on Si can promote
advances in next-generation integrated optoelectronic technology.
Organic–inorganic hybrid perovskites have exhibited unprecedented advantages for x-ray photon detection due to their exotic properties. Their high-crystalline quality has a great impact for high-detection sensitivity under a low electric field, especially related to the synthesis method. In this work, we analyze the capability of CH3NH3PbI3 (MAPbI3) perovskites as an x-ray detection material and propose to control the temperature gradient (TG) during the synthesis of MAPbI3 single crystal perovskites for device fabrication. Our results show that the decreasing TG can effectively reduce the trap density and improve the crystal quality, which could lead to a boosted sensitivity of 1471.7 μC/Gyair/cm2 under a low electric field of 3.3 V/mm. In addition, a higher detection sensitivity can be achieved by increasing the electric field. Our work presents a strategy to construct high-performance direct x-ray detectors.
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