The in-plane orientations of Si/SiC heterojunctions on 6H-SiC(0001) were investigated by high-resolution X-ray diffraction. An SiIJ111)/SiC(0001) heterostructure with an in-plane orientation of Siij01−1]//SiC[110] is achieved at 900 °C, the Si/6H-SiC interface has a 4 : 5 Si-to-SiC matching mode with a residual lattice mismatch of 0.26%, and the edge dislocation density at the Si/SiC interface is calculated to be 4.87 × 10 13 cm −2 . As the growth temperature is increased to 1050 °C, the [110] preferential growth with an in-plane orientation of Siij−110]//SiC[0−10] is observed, along Siij001]SiC [210] orientations, the Si-to-SiC mode changes to approximately 1 : 2 and the residual mismatch is 1.84%. The edge dislocation density increases to 1.22 × 10 14 cm −2 correspondingly.
This paper present an experimental study on a new dry transfer method of graphene applied as transparent conducting electrode in textured silicon solar cells. Raman spectra of dry exfoliated graphene indicated a monolayer graphene was transferred onto textured Si cells and the dry exfoliated graphene with better crystalline quality is attained. Photovoltaic result shows the short circuit current of the dry transferred graphene on texture Si solar cell has an increase of 28% compared to the wet transferred graphene. It proves the possibility of dry transferred graphene as transparent conducting electrode in textured Si solar cell applications.
To widen the detection wavelength range and improve the detection sensitivity of SiC-based optoelectronic devices, the SiC/Ge/graphene heterojunction was fabricated by using wet transfer of the graphene following chemical vapor deposition. The Ge films on 4H-SiC(0001) have polycrystalline structure with nano-wire (NWs) and submicron spherical island (SIs) features. Due to the distinct light trapping effect of the Ge NWs, the SiC/GeNWs/graphene heterojunction has an absorbance of more than 90% in the 500–1600 nm range, which is higher than the SiC/GeSIs/graphene heterojunction. And the SiC/GeNWs/graphene heterojunction photodetector exhibits rectification ratio up to 25 at ±2 V and stable photoresponse to the NIR light at zero voltage bias.
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