Preparation of SiC/Ge/graphene heterostructure on 4H-SiC(0001)

Chu, Qing; Li, Lianbi; Zhu, Changjun; Yuan, Zhimin; Lin, Shenghuang; Han, Yuling

doi:10.1016/j.matlet.2017.09.112

Cited by 15 publications

(10 citation statements)

References 18 publications

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“…Ge/4H-SiC Heterojunction Model. Figure 1 displays the interface structure of the Ge(111)/4H-SiC(0001) heterojunction based on the TEM characterizations [3]. The primitive cells of Ge(111) surface and 4H-SiC(0001) surface possess lattice constants of [01-1] Ge = 4.000Å, [11][12][13][14][15][16][17][18][19][20] SiC = 3.078Å.…”

Section: Resultsmentioning

confidence: 99%

“…The Ge(111)/4H-SiC(0001) interface has the same 3 : 4 Ge-to-SiC matching mode with a residual mismatch of 2.60% along both the Ge[01-1] and Ge[2-1-1] orientations. In contrast, the situation of the Ge(110)/4H-SiC(0001) interface is different, along Ge [1][2][3][4][5][6][7][8][9][10] orientation, the Ge-to-SiC matching mode is still 3 : 4; along the vertical orientation of Ge[001], the Geto-SiC mode changes to 1 : 1 and the residual mismatch changes to −5.78% correspondingly. The MD densities of the Ge(111)/4H-SiC(0001) interface and Ge(110)/4H-SiC(0001) interface are as low as 5.334 × 10 14 cm −2 and 1.523 × 10 14 cm −2 , respectively, as shown in Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…However, it is not sensitive to the infrared and visible light region. Ge/SiC heterojunction was employed to solve the problem, in which the Ge layer of micronanostructure was used as an absorption layer for nearinfrared (NIR) light [3]. By using the Ge/SiC heterojunction, SiC-based NIR light-operated device could be realized.…”

Section: Introductionmentioning

confidence: 99%

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First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

Zhu

et al. 2018

Advances in Condensed Matter Physics

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First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated. It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics. The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction interface is lower than that of Ge(111)/4H-SiC(0001) interface, indicating that Ge(110)/4H-SiC(0001) interface is easier to form at relative low temperature. The interfacial bonding is analysed using partial density of states and total charge density distribution, and the results show that the bonding is contributed by the Ge-Si bonding.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

Zhu

et al. 2018

Advances in Condensed Matter Physics

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“…Metal intercalation is a promising method to modify and decouple EG on SiC for electronics applications [21,[69][70][71]. Many elements, including Li [72], Ge [73], Pt [74], Pb [75] and rare-earth metals [76] have been adopted for intercalation. Pd [77] and Cu [78] can penetrate the SiC buffer layer to dope the graphene layer.…”

Section: Mechanism and Features Of Metal Intercalationmentioning

confidence: 99%

The growth of epitaxial graphene on SiC and its metal intercalation: a review

Yang,

Ma,

Bian

et al. 2024

J. Phys.: Condens. Matter

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High-quality epitaxial graphene (EG) on SiC is crucial to high-performance electronic devices due to the good compatibility with Si-based semiconductor technology. Metal intercalation has been considered as a basic technology to modify EG on SiC. In the past ten years, there have been extensive research activities on the structural evolution during EG fabrication, characterization of the atomic structure and electronic states of EG, optimization of the fabrication process, as well as modification of EG by metal intercalation. In this perspective, the developments and breakthroughs in recent years are summarized and future expectations are discussed. A good understanding of the growth mechanism of EG and subsequent metal intercalation effects is fundamentally important.

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“…[9][10][11][12][13][14] However, the wet transfer graphene process cannot avoid metal ions and organic pollution. Although scientists began to study graphene growth methods on semiconductor substrates 15 and insulating substrates, 16 these methods are limited by the particular substrate and poor flexibility. In this paper, a dry transfer method of graphene is introduced to fabricated graphene transparent electrode on traditional Si solar cells without using any solution but DI water.…”

Section: Introductionmentioning

confidence: 99%

Graphene as transparent electrode in Si solar cells: A dry transfer method

Yuan

Chu

et al. 2018

AIP Advances

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This paper present an experimental study on a new dry transfer method of graphene applied as transparent conducting electrode in textured silicon solar cells. Raman spectra of dry exfoliated graphene indicated a monolayer graphene was transferred onto textured Si cells and the dry exfoliated graphene with better crystalline quality is attained. Photovoltaic result shows the short circuit current of the dry transferred graphene on texture Si solar cell has an increase of 28% compared to the wet transferred graphene. It proves the possibility of dry transferred graphene as transparent conducting electrode in textured Si solar cell applications.

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Preparation of SiC/Ge/graphene heterostructure on 4H-SiC(0001)

Cited by 15 publications

References 18 publications

First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

The growth of epitaxial graphene on SiC and its metal intercalation: a review

Graphene as transparent electrode in Si solar cells: A dry transfer method

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