The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications. WSe2 belongs to a family of transition‐metal dichalcogenides. Similar to graphene, WSe2 and analogous dichalcogenides have layered structures with weak van der Waals interactions between two adjacent layers. First, the readers are presented with the fundamentals of WSe2, such as types, morphologies, and properties. Here, we report the characterization principles and practices such as microscopy, spectroscopy, and diffraction. Second, the methods for obtaining high‐quality WSe2, such as exfoliation, hydrothermal and chemical vapor deposition, are briefly listed. With advantages of light weight, flexibility, and high quantum efficiency, 2D materials may have a niche in optoelectronics as building blocks in p‐n junctions. Therefore, we introduce a state‐of‐the‐art demonstration of heterostructure devices employing the p‐type WSe2 semiconductor. The device architectures include field‐effect transistors, photodetectors, gas sensors, and photovoltaic solar cells. Due to its unique electronic, optical, and energy band properties, WSe2 has been increasingly investigated due to the conductivity of the p‐type charge carrier upon palladium contact. Eventually, the dynamic research on WSe2 and van der Waals heterostructures is summarized to arouse the passion of the 2D research community.image
The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.
The early diagnosis of diseases plays a vital role in healthcare and the extension of human life. Graphene-based biosensors have boosted the early diagnosis of diseases by detecting and monitoring related biomarkers, providing a better understanding of various physiological and pathological processes. They have generated tremendous interest, made significant advances, and offered promising application prospects. In this paper, we discuss the background of graphene and biosensors, including the properties and functionalization of graphene and biosensors. Second, the significant technologies adopted by biosensors are discussed, such as field-effect transistors and electrochemical and optical methods. Subsequently, we highlight biosensors for detecting various biomarkers, including ions, small molecules, macromolecules, viruses, bacteria, and living human cells. Finally, the opportunities and challenges of graphene-based biosensors and related broad research interests are discussed.
The first isolation of graphene opens the avenue for new platforms for physics, electronic engineering, and materials sciences. Among several kinds of synthesis approaches, chemical vapor deposition is most promising for the growth at wafer‐scale, which is compatible with the Si‐based electronic device integration protocols. In this review, the types, properties, and synthesis methods of graphene are first introduced. Many details of wafer‐scale graphene synthesis by chemical vapor deposition strategies are given, including the wafer‐scale single crystal metal and alloy preparation, roll to roll synthesis over Cu, roll to roll electrochemical transfer technique. Besides, the batch‐to‐batch synthesis are highlighted for direct graphene over dielectric substrates such as sapphire and Si/SiO2. The electronic transport and transparent conductance of the wafer‐scale graphene are compared with high‐quality single crystal. The progress and proof‐of‐the‐concept are briefly recalled in graphene‐based electronics such as transistors, sensors, integrated circuits, and spin transport valves. Eventually, the readers are provoked with the current challenges as well as the future opportunities.
Contact engineering, especially at the interface between metal and 2D semiconductors, to enable high‐performance devices remains a formidable challenge due to the inevitable chemical disorder and Fermi‐level pinning at the interface. Here, the authors report the InSe–Se vertical van der Waals (vdW) heterostructures to achieve high field‐effect mobility and electrical stability in 30 nm InSe field‐effect transistor (FET), which has a low lattice mismatch of 1.1% and form 2D/2D low‐resistance contacts, creating an InSe contact interface that substantially limits chemical disorder and Fermi‐level pinning. The Se layer forms a vdW contact to prevent the damage induced by direct metallization and acts as a tunneling layer as well as a protective encapsulation layer. Using this approach, heterojunction devices with a high field‐effect mobility of ≈2500 cm2 (V s)−1 and an excellent on‐state current of ≈10−3 A at room temperature is achieved. Furthermore, the device field‐effect mobility degrades by only 3.46% following two months of storage time in open air, which represents the best electrical stability reported to date. In particular, the heterojunction devices exhibit a better photoresponsivity compared with InSe devices in practical application. This study provides a highly valuable strategy to improve the contact condition of metal/2D semiconductors for high‐performance, 2D‐based electronics and optoelectronics.
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