Epitaxial thin films of PrBa 2 (Cu 0.8 Al 0.2) 3 O 7 have been vacuum deposited by rf sputtering on the LaAlO 3 substrates. Though electrically much more resistive, these Al-substituted films are all of orthorhombic structure and epitaxial quality on various oxide substrates, much like YBa 2 Cu 3 O 7 and PrBa 2 Cu 3 O 7 grown under similar conditions. The samples appeared to be shiny and dark as observed with the naked eye, but their electrical resistivity, (T), ranged from ϳ1 ⍀ cm at room temperature to about six orders of magnitude higher at Tϳ30 K. From the (T) functional for both the target and the films, which, by and large, follows Mott's T Ϫ1/4 law with their own relevant material constants, we believe that the mechanism of electrical conduction was mainly through variable range hopping. This suggests that the substitution of Al has caused extensive localization of charge carriers. The localization radius is ϳ0.2 nm while the hopping distance is ϳ3-9 nm.
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