The energy-band alignments for the ZrO 2 / Si, ZrO 2 /Si 0.75 Ge 0.25 , and ZrO 2 / Ge interfaces have been studied using x-ray photoemission. The valence-band offsets of ZrO 2 / Si, ZrO 2 /Si 0.75 Ge 0.25 , and ZrO 2 / Ge interfaces are determined to be 2.95, 3.13, and 3.36 eV, respectively, while the conduction-band offsets are found to be the same value of 1.76± 0.03 eV for three interfaces. The upward shift of valence-band top accounts for the difference in the energy-band alignment at three interfaces.
Conductive oxides RuOx as alternative electrode on high-κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx∕HfO2∕Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2∕Si are determined to be 3.05±0.1 and 1.48±0.1eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95–2.73eV.
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