In this work, 65nm NOR flash memory is used for an evaluation of data retention and impact on cell charge based on varying levels of exposure to x-ray waves. A sample of 100 fully tested and configured units were programmed with a physical checkerboard pattern (half programmed, half erased) and exposed to conditions found in industrial x-ray stations. Readouts of the data pattern were done at various stages throughout the experiment and a comparison of cell Vt was performed on a population of worst case cells (lowest Vt on programmed cells, highest Vt on erased cells). Data was collected on a bit by bit basis and plotted as a cumulative probability function. Bakes were also performed to introduce any potential defects not seen initially as part of the exposure -and the readout data was collected for this stage as well. Results indicated there is a correlation on the amount of charge gain and loss seen based on the amount of total radiation incident upon the cells in extreme conditions.
Pulsed Laser Deposition (PLD) technique is used to grow 6 different films using three primary targets, namely BaTiO3, SrTiO 3 , and Ba .6 Sr .4 TiO 3 . In addition to the original three materials of the targets, three new combinatorial materials have been synthesized. The new materials are mixes of . The material properties were investigated using X-Ray diffraction, Atomic Force Microscopy, I-V measurements and C-V analysis. The results indicate that we the materials deposited are pervoskites with high dielectric constants suitable for high-K MOSFETS, memory cells, and microwave components and arrays.
Combinatorial composition films of Ba x Sr 1-x TiO 3 were grown on two-inch p-Si by pulsed laser deposition. Large areas of six different combinatorial composition films were grown on the same wafer using three primary target materials. Consequently, the deposition of Ba 0.5 Sr 0.5 TiO 3 films was obtained from targets BaTiO 3 and SrTiO 3 , the deposition of Ba 0.3 Sr 0.7-TiO 3 films was obtained from targets SrTiO 3 and Ba 0.6 Sr 0.4 TiO 3 , and the Ba 0.8 Sr 0.2 TiO 3 film was obtained from targets Ba 0.6 Sr 0.4 TiO 3 and BaTiO 3 . The results indicate that the deposited materials are perovskite structures with high dielectric constants ranging from 49.4 to 193.2 and leakage current densities as low as 1.25 9 10 À7 A/cm 2 at À2V.
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