Evaluation of x-ray irradiation on 65nm Multi-Level Cell NOR flash technologies

Navuduri, Praveen; Melton, W.; Oen, Andrew; Eilert, Sean; Abraham, Chintu; Wen, Shi-Jie

doi:10.1109/iirw.2010.5706497

Cited by 2 publications

(3 citation statements)

References 4 publications

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“…Navuduri et al reported that X-ray irradiation on 65 nm MLC NOR causes significant amount of CL from programmed cells. 42 The amount of CL is approximately correlates with X-ray dosage. [42][43][44] In Ref.…”

Section: Induced By Irradiation Of High Energy Particlesmentioning

confidence: 99%

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Threshold Voltage Instability Mechanisms of Nitride Based Charge Trap Flash Memory—A Review

Lee¹,

Wong²

2014

j. nanosci. nanotech.

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Technological scaling of charge trap device has become significantly more challenging due to two major physical limits revealed by International Technology Roadmap for Semiconductors (ITRS) 2011, i.e., (1) neighboring bit interference due to consistent shrinking in design floor space; (2) balancing act of ensuring sufficient number of electrons in shrinking storage layer to maintain stable threshold voltage (V(t)) against various V(t) instability mechanisms. Nitride based charge trap flash (CTF) is one of the better candidates to replace floating gate (FG) flash as the mainstream flash memory technology due to its inherent immunity to point defects and better device scalability. However, post cycled V(t) instability in the form of V(t) distribution shift and broadening of programmed/erased cells is still genuine reliability concerns for nitride based CTF devices. This is because the shift and broadening of V(t) distribution could degrade the operating window and thus caused premature failures of the devices. V(t) instability of nitride based CTF memory inevitably introduces statistical fluctuations in V(t) distribution of nitride based CTF which is detrimental to its long-term data retention performance. The scope of this review paper focuses on critical reliability challenges of future development of nitride based CTF development with emphasis on cell level V(t) instability mechanisms. Our review on recent findings of V(t) instability mechanisms are useful references for future development of nitride based CTF devices.

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Section: Induced By Irradiation Of High Energy Particlesmentioning

confidence: 99%

“…42 The amount of CL is approximately correlates with X-ray dosage. [42][43][44] In Ref. [85], it was reported that programmed V t distribution of typical nitride based CTF memory suffer from CL and broadens while shifting to lower V t level after irradiation of TID 80 krad.…”

Section: Induced By Irradiation Of High Energy Particlesmentioning

confidence: 99%

Threshold Voltage Instability Mechanisms of Nitride Based Charge Trap Flash Memory—A Review

Lee¹,

Wong²

2014

j. nanosci. nanotech.

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“…Electrically Erasable Programmable Read-Only Memory (EEPROM) was a kind of common usefully memory and its irradiation feature was very important to total-dose irradiation harden design of EEPROM devices [3,4]. Total ionizing dose irradiation effect in EEPROM Devices with different bias was studied in this paper.…”

Section: Introductionmentioning

confidence: 99%

Bias dependence of total dose effects in the irradiated EEPROM devices

Liu

2014

2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)

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Total ionizing dose irradiation effect in EEPROM Devices with different bias was studied in this paper. Three biases, concluded with NONE bias, Zero bias and Work bias, were used in EEPROM devices with "1" state and "0" state in this paper. It was indicated that the threshold voltage shift negatively as total dose increased in EEPROM devices with "1" state and the threshold voltage shift positively as total dose increased in EEPROM devices with "0" state, and the Work bias was the worst irradiation bias regardless of "1" state or "0" state.

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Evaluation of x-ray irradiation on 65nm Multi-Level Cell NOR flash technologies

Cited by 2 publications

References 4 publications

Threshold Voltage Instability Mechanisms of Nitride Based Charge Trap Flash Memory—A Review

Threshold Voltage Instability Mechanisms of Nitride Based Charge Trap Flash Memory—A Review

Bias dependence of total dose effects in the irradiated EEPROM devices

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