Borophene, an elemental metallic Dirac material is predicted to have unprecedented mechanical and electronic character. Need of substrate and ultrahigh vacuum conditions for deposition of borophene restricts its large‐scale applications and significantly hampers the advancement of research on borophene. Herein, a facile and large‐scale synthesis of freestanding atomic sheets of borophene through a novel liquid‐phase exfoliation and the reduction of borophene oxide is demonstrated. Electron microscopy confirms the presence of β12, X3, and their intermediate phases of borophene; X‐ray photoelectron spectroscopy, and scanning tunneling microscopy, corroborated with density functional theory band structure calculations, validate the phase purity and the metallic nature. Borophene with excellent anchoring capabilities is used for sensing of light, gas, molecules, and strain. Hybrids of borophene as well as that of reduced borophene oxide with other 2D materials are synthesized, and the predicted superior performance in energy storage is explored. The specific capacity of borophene oxide is observed to be ≈4941 mAh g−1, which significantly exceeds that of existing 2D materials and their hybrids. These freestanding borophene materials and their hybrids will create a huge breakthrough in the field of 2D materials and could help to develop future generations of devices and emerging applications.

Borophene, a 2D allotrope of boron and the lightest elemental Dirac material, is the latest very promising 2D material owing to its unique structural and electronic characteristics of the X3 and β12 phases. The high atomic density on ridgelines of the β12 phase of borophene provides a substantial orbital overlap, which leads to an excellent electron density in the conduction level and thus to a highly metallic behavior. These unique structural characteristics and electronic properties of borophene attract significant scientific interest. Herein, approaches for crystal growth/synthesis of these unique nanostructures and their potential technological applications are discussed. Various substrate‐supported ultrahigh‐vacuum growth techniques for borophene, such as molecular beam epitaxy, atomic layer deposition, and chemical vapor deposition, along with their challenges, are also summarized. The sonochemical exfoliation and modified Hummer's technique for the synthesis of free‐standing borophene are also discussed. Solution‐phase exfoliation seems to address the scalability issues and expands the applications of these unique materials to various fields, including renewable energy devices and ultrafast sensors. Furthermore, the electronic, optical, thermal, and elastic properties of borophene are thoroughly discussed and are compared with those of graphene and its “cousins.” Numerous frontline applications are envisaged and an outlook is presented.

A low cost, non-explosive process for the synthesis of graphene oxide (GO) is demonstrated. Using suitable choice of reaction parameters including temperature and time, this recipe does not require expensive membranes for filtration of carbonaceous and metallic residues. A pre-cooling protocol is introduced to control the explosive nature of the highly exothermic reactions during the oxidation process. This alleviates the requirement for expensive membranes and completely eliminates the explosive nature of intermediate reaction steps when compared to existing methods. High quality of the synthesized GO is corroborated using a host of characterization techniques including X-ray diffraction, optical spectroscopy, X-ray photoemission spectroscopy and current-voltage characteristics. Simple reduction protocol using ultra-violet light is demonstrated for potential application in the area of photovoltaics. Using different reduction protocols together with the proposed inexpensive method, reduced GO samples with tunable conductance over a wide range of values is demonstrated. Density functional theory is employed to understand the structure of GO. We anticipate that this scalable approach will catalyze large scale applications of GO.

Even though transition metal dichalcogenides (TMDCs) are deemed to be novel photonic and optoelectronic 2D materials, the visible band gap being often limited to monolayer, hampers their potential in niche applications due to fabrication challenges. Uncontrollable defects and degraded functionalities at elevated temperature and under extreme environments further restrict their prospects. To address such limitations, the discovery of a new 2D material, α-PbO is reported. Micromechanical as well as sonochemical exfoliation of 2D atomic sheets of α-PbO are demonstrated and its optical behavior is investigated. Spectroscopic investigations indicate layer dependent band gaps. In particular, even multilayered PbO sheets exhibit visible band gap > 2 eV (direct) which is rare among semiconducting 2D materials. The emission lifetime of multilayer PbO atomic sheets is 7 ns (dim light) as compared to the monolayer which gives 2.5 ns lifetime and an intense light. Density functional theory calculations of layer dependent band structure of α-PbO matches well with experimental results. Experimental findings suggest that PbO atomic sheets exhibit hydrophobic nature, thermal robustness, microwave stability, anti-corrosive behaviour and acid resistance. This new low-cost, abundant and robust 2D material is expected to find many applications in the fields of electronics, optoelectronics, sensors, photocatalysis and energy storage.

metallic), is a new sensation in the flatland. [1][2][3] Incidentally, among various 2D materials, while boron nitride (BN) has large Young's modulus but compromised mobility, phosphorene and silicene have appreciable carrier mobility but compromised elastic behavior. [4] Graphene, considered the wonder material of this century fairs exceedingly well and its carrier mobility, as well as Young's modulus, are simultaneously high, which places it at a different pedestal. [5,6] However, e-h symmetry and spin symmetry in graphene result in insufficient signal/noise ratio in electronic as well as spintronic chips. [7] Borophene, being metallic in both β 12 and X 3 crystallographic phases, also has excellent elastic strength and electronic mobility, which altogether places it at a significant pedestal among 2D materials. The evolution of borophene is expected to bring in new dimensions to 2D-materialbased next-generation devices [8] (see the schematic plot in Figure 1a for the comparative presentation of ln (mobility) vs Young's modulus for various 2D materials). [9][10][11][12][13] Anisotropic atomic ordering results in enhanced electronic mobility ≈1.82 × 10 6 cm 2 V −1 s −1 , Young's modulus ≈398 N m −1 , and thermal conductivity along atomic ridgelines. [14,15] In particular, for flexible electronic as well as spintronic chip applications, high electron mobility and Young's modulus are desirable simultaneously and borophene Borophene, the lightest among all Xenes, possesses extreme electronic mobility along with high carrier density and high Young's modulus. To accomplish device-quality borophene, novel approaches of realization of monolayers need to be urgently explored. In this work, micromechanical exfoliation is discovered to result in mono-and few-layered borophene of device quality. Borophene sheets are successfully fabricated down to monolayer thickness. Distinct crystallographic phases of borophene viz. XRD study reveals crystallographic phase transition from rhombohedral to several other eigen phases of borophene. The role of the destination substrates is held crucial in determining the final phase of the transferred sheet. The exfoliation energy is calculated by density functional theory. Molecular dynamics simulations are used to simulate the exfoliation process. Heterolayers of borophene, with black phosphorene (BP) or with molybdenum disulfide (MoS 2 ) atomic sheets, are found to result in photoexcited coupling quantum states. Gold-coated borophene bestows promising anchoring capability for surface-enhanced Raman spectroscopy (SERS). Successful demonstration of the electronic behavior of micromechanically exfoliated borophene and excitonic behavior of borophene-based heterolayers will guide future generation devices not only in electronics and excitonics, but also in thermal management, electronic packaging, hydrogen storage, hybrid energy storage, and clean energy solutions.

Quantum flatland i.e., the family of two dimensional (2D) quantum materials has become increscent and has already encompassed elemental atomic sheets (Xenes), 2D transition metal dichalcogenides (TMDCs), 2D metal nitrides/carbides/carbonitrides (MXenes), 2D metal oxides, 2D metal phosphides, 2D metal halides, 2D mixed oxides, etc. and still new members are being explored. Owing to the occurrence of various structural phases of each 2D material and each exhibiting a unique electronic structure; bestows distinct physical and chemical properties. In the early years, world record electronic mobility and fractional quantum Hall effect of graphene attracted attention. Thanks to excellent electronic mobility, and extreme sensitivity of their electronic structures towards the adjacent environment, 2D materials have been employed as various ultrafast precision sensors such as gas/fire/light/strain sensors and in trace-level molecular detectors and disease diagnosis. 2D materials, their doped versions, and their hetero layers and hybrids have been successfully employed in electronic/photonic/optoelectronic/spintronic and straintronic chips. In recent times, quantum behavior such as the existence of a superconducting phase in moiré hetero layers, the feasibility of hyperbolic photonic metamaterials, mechanical metamaterials with negative Poisson ratio, and potential usage in second/third harmonic generation and electromagnetic shields, etc. have raised the expectations further. High surface area, excellent young’s moduli, and anchoring/coupling capability bolster hopes for their usage as nanofillers in polymers, glass, and soft metals. Even though lab-scale demonstrations have been showcased, large-scale applications such as solar cells, LEDs, flat panel displays, hybrid energy storage, catalysis (including water splitting and CO2 reduction), etc. will catch up. While new members of the flatland family will be invented, new methods of large-scale synthesis of defect-free crystals will be explored and novel applications will emerge, it is expected. Achieving a high level of in-plane doping in 2D materials without adding defects is a challenge to work on. Development of understanding of inter-layer coupling and its effects on electron injection/excited state electron transfer at the 2D-2D interfaces will lead to future generation heterolayer devices and sensors.

No abstract

Worldwide infection and fatality by SARS-CoV-19 virus and its variants responsible for COVID 19 have impeded economic growth of developing nations beyond repair, General public in several nations have lost...