Defects signature in VOC characterization of thin-film solar cells

Kumar, Atul; Ranjan, Pranay

doi:10.1016/j.solener.2021.03.017

Cited by 31 publications

(17 citation statements)

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“…across heterojunctions’ optoelectrical solar cell device using appropriate conditions, defect models, script files, recorder setup, etc. [ 49–58 ] It is a Poisson–Schrodinger solver in one dimension which iteratively solves coupled electrostatic Poisson's and continuity equations, drift‐diffusion equation and generation–recombination profiles, using the Gummel iteration method with Newton–Ralphson substeps alongside the length of the device, at the junction under various illumination and biasing conditions. Applying relevant boundary conditions at the interfaces and different contacts, SCAPS solves the coupled differential equations in (Ψ, n , p ) or (Ψ, E Fn , E Fp ).

J_{normaln} = - \frac{μ_{normaln} n}{q} \frac{d E_{Fn}}{d x}

J_{normalp} = \frac{μ_{normalp} p}{q} \frac{d E_{Fp}}{d x}

- \frac{d J_{normaln}}{d x} - U_{normaln} + G = \frac{d n}{d t}

- \frac{d J_{normalp}}{d x} - U_{normalp} + G = \frac{d p}{d t}

\frac{d}{d x} (ε_{0} ε_{normalr} \frac{dΨ}{d x}) = - q (p - n + N_{normalD}^{+} - N_{normalA}^{-} + \frac{ρ_{def}}{q})

where Ψ is the electrostatic potential, ε 0 and ε r is the permittivity of vacuum and semiconductor, n and p are the respective carrier densities, N D + are N...…”

Section: Methodsmentioning

confidence: 99%

“…[40][41][42][43][44][45][46][47][48] setup, etc. [49][50][51][52][53][54][55][56][57][58] It is a Poisson-Schrodinger solver in one dimension which iteratively solves coupled electrostatic Poisson's and continuity equations, drift-diffusion equation and generationrecombination profiles, using the Gummel iteration method with Newton-Ralphson substeps alongside the length of the device, at the junction under various illumination and biasing conditions. Applying relevant boundary conditions at the interfaces and different contacts, SCAPS solves the coupled differential equations in (Ψ, n, p) or (Ψ, E Fn , E Fp ).…”

Section: Simulation Detailsmentioning

confidence: 99%

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Bandgap Assessment of Compositional Variation for Uncovering High‐Efficiency Improved Stable All‐Inorganic Lead‐Free Perovskite Solar Cells

Prabu

Malathi

Kumar

et al. 2023

Physica Status Solidi (a)

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The quest for suitable material technology becomes an imperative aspect of PV energy conversion applications. Pursuing ideal materials or designing efficient PV devices requires a keen understanding of underlying PV action and material properties. These include defect-free, chemically and mechanically stable, semiconductive, and absorption properties, which could be easily tuned, manipulated, and readily fabricated. The candidate for such a futuristic material could be a perovskite solar cell (PSC), which has a dramatically improved performance over the last decade. [4] Recent reports observed a steep rise in efficiency from %3% to %25.5% for Pb-based hybrid perovskites (a combination of MAPbI 3 and FAPbI 3 ). [5][6][7][8] These hybrid compositions of PSC are susceptible to long-term stability issues due to temperature, moisture exposure cycle, lead (Pb)based toxicity, and I-V hysteresis characteristics, which limit or question their practical use. [9][10][11] Therefore, the significant research gap is to find practical solutions to the Pb-toxicity and stability issue while preserving or improving the inherent performance and remarkable photophysical properties. Stability issues in hybrid organic-inorganic perovskite are severe limiting issues, mainly due to hygroscopicity, volatility, and thermal and chemical instability of organic cations. It is likely resolved by replacing the organic part with inorganic-based perovskite. [12] For addressing stability issue, organic cations such as CH 3 NH 3 þ (methylammonium, MA) and (HC(NH 2 ) 2 þ (formamidium, FA) are substituted with inorganic cations such as Cs and Rb. For addressing Pb toxicity issues, Pb is substituted with same group elements Sn and Ge. [13][14][15][16][17][18] The fully inorganic perovskite are continually explored to identify suitable replacements for Pb toxicity and MA stability issues while maintaining perovskite's superior optical properties. The inorganic absorberbased devices of CsPbI 3 have shown efficiency of 20%. [19] These inorganic absorbers perform comparatively with original hybrid organic-inorganic (MAPbI 3 , FAPbI 3 ) perovskites; however, it does not answer the lead presence issue. Sn-replaced Pb perovskites have shown high absorption and optical properties, optimal bandgap, and efficiency around 10% in FASnI 3 devices. This Sn substitution solves the Pb toxicity issues; however, Sn readily goes under oxidation from Sn þ2 to Sn þ4 , which rapidly degrades device performances and further aggravates the stability issues. Literature reports have shown that partial substitution

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J_{normaln} = - \frac{μ_{normaln} n}{q} \frac{d E_{Fn}}{d x}

J_{normalp} = \frac{μ_{normalp} p}{q} \frac{d E_{Fp}}{d x}

- \frac{d J_{normaln}}{d x} - U_{normaln} + G = \frac{d n}{d t}

- \frac{d J_{normalp}}{d x} - U_{normalp} + G = \frac{d p}{d t}

\frac{d}{d x} (ε_{0} ε_{normalr} \frac{dΨ}{d x}) = - q (p - n + N_{normalD}^{+} - N_{normalA}^{-} + \frac{ρ_{def}}{q})

where Ψ is the electrostatic potential, ε 0 and ε r is the permittivity of vacuum and semiconductor, n and p are the respective carrier densities, N D + are N...…”

Section: Methodsmentioning

confidence: 99%

Section: Simulation Detailsmentioning

confidence: 99%

Bandgap Assessment of Compositional Variation for Uncovering High‐Efficiency Improved Stable All‐Inorganic Lead‐Free Perovskite Solar Cells

Prabu

Malathi

Kumar

et al. 2023

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…It is well established that 1) intrinsic defect‐assisted recombination resulted from deep‐level carrier traps in the bulk and 2) interface‐induced recombination resulted from unfavorable band alignment, small‐sized gain boundary, and mismatched lattice at interface and surface are main causes for large V OC ‐deficit characteristics in inorganic‐based TFSCs. [ 70 ] According to the previous defect study for GeSe‐based TFSCs, the deep‐level defect densities for Se Ge (at 0.35 eV) and Ge Se (at 0.51 eV) were estimated to be ≈10 12 cm −3 , while bulk defect density of GeSe was ≈10 15 cm −3 dominated by V Ge [14a] . This study suggested that the abundant intrinsic defect with low formation energies can form only shallow levels, while high formation energy of deep‐level defects is low concentrations.…”

Section: Optoelectronic Applicationsmentioning

confidence: 99%

Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

Kamble,

Shin,

Park

et al. 2023

Solar RRL

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Germanium selenide (GeSe), a new 2D semiconductor material, is an attractive material due to its excellent optoelectronic properties, which hold tremendous promise in a wide range of applications, including thin‐film solar cells (TFSCs) and photoelectrochemical (PEC) water splitting. Several attempts have been made to date in theoretical studies, high‐quality GeSe material synthesis, evaluating absorber properties, and developing efficient TFSCs and PEC devices. Using existing device topologies for chalcogenide materials, TFSCs with 5.2% efficiency and a PEC device with 3.17% solar‐to‐hydrogen efficiency have been recently developed. To enable its potential in high performances of TFSCs and PEC devices for future large‐scale applications, further improvement in materials quality, device design, and development is required. In this regard, this review provides a comprehensive overview of current advances made in GeSe material development and applications in TFSCs and PEC devices. First, the fundamental properties of GeSe material, theoretical studies, as well as in‐depth synthesis methods, are outlined. Then, key developments in GeSe‐based TFSCs and PEC devices are discussed with an emphasis on device designs. Finally, the most prominent impediments to a fundamental understanding of materials are highlighted, and perspectives on future research directions for improving material quality and device efficiency are provided.

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“…Graphene has revolutionized materials science and engineering. Applications spanning over electronic chips, electron tunneling devices, LEDs, solar cells, energy sector, laser shields, light combat aircraft, night vision cameras, advanced electronic gadgets, SERS based molecular detection, gas sensing prompt disease (viral/cancer/diabetic) diagnosis [ 2 – 19 ], etc. have rendered it a wonder material.…”

Section: Introduction To 2d Materialsmentioning

confidence: 99%

2D materials: increscent quantum flatland with immense potential for applications

et al. 2022

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Quantum flatland i.e., the family of two dimensional (2D) quantum materials has become increscent and has already encompassed elemental atomic sheets (Xenes), 2D transition metal dichalcogenides (TMDCs), 2D metal nitrides/carbides/carbonitrides (MXenes), 2D metal oxides, 2D metal phosphides, 2D metal halides, 2D mixed oxides, etc. and still new members are being explored. Owing to the occurrence of various structural phases of each 2D material and each exhibiting a unique electronic structure; bestows distinct physical and chemical properties. In the early years, world record electronic mobility and fractional quantum Hall effect of graphene attracted attention. Thanks to excellent electronic mobility, and extreme sensitivity of their electronic structures towards the adjacent environment, 2D materials have been employed as various ultrafast precision sensors such as gas/fire/light/strain sensors and in trace-level molecular detectors and disease diagnosis. 2D materials, their doped versions, and their hetero layers and hybrids have been successfully employed in electronic/photonic/optoelectronic/spintronic and straintronic chips. In recent times, quantum behavior such as the existence of a superconducting phase in moiré hetero layers, the feasibility of hyperbolic photonic metamaterials, mechanical metamaterials with negative Poisson ratio, and potential usage in second/third harmonic generation and electromagnetic shields, etc. have raised the expectations further. High surface area, excellent young’s moduli, and anchoring/coupling capability bolster hopes for their usage as nanofillers in polymers, glass, and soft metals. Even though lab-scale demonstrations have been showcased, large-scale applications such as solar cells, LEDs, flat panel displays, hybrid energy storage, catalysis (including water splitting and CO2 reduction), etc. will catch up. While new members of the flatland family will be invented, new methods of large-scale synthesis of defect-free crystals will be explored and novel applications will emerge, it is expected. Achieving a high level of in-plane doping in 2D materials without adding defects is a challenge to work on. Development of understanding of inter-layer coupling and its effects on electron injection/excited state electron transfer at the 2D-2D interfaces will lead to future generation heterolayer devices and sensors.

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Defects signature in VOC characterization of thin-film solar cells

Cited by 31 publications

References 31 publications

Bandgap Assessment of Compositional Variation for Uncovering High‐Efficiency Improved Stable All‐Inorganic Lead‐Free Perovskite Solar Cells

Bandgap Assessment of Compositional Variation for Uncovering High‐Efficiency Improved Stable All‐Inorganic Lead‐Free Perovskite Solar Cells

Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

2D materials: increscent quantum flatland with immense potential for applications

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