We measured thermal conductivity kappa, thermoelectric power S, and electric conductivity sigma of La(5/8-x)Pr(x)Ca(3/8)MnO3, showing an intricate interplay between metallic ferromagnetism (FM) and charge ordering (CO) instability. The change of kappa, S, and sigma with temperature (T) and x agrees well with the effective medium theories for binary metal-insulator mixtures. This agreement clearly demonstrates that with the variation of T as well as x, the relative volumes of FM and CO phases drastically change and percolative metal-insulator transition occurs in the mixture of FM and CO domains.

We use a spatially resolved, direct spectroscopic probe for electronic structure with an additional sensitivity to chemical compositions to investigate high-quality single crystal samples of La(1/4)Pr(3/8)Ca(3/8)MnO3, establishing the formation of distinct insulating domains embedded in the metallic host at low temperatures. These domains are found to be at least an order of magnitude larger in size compared to previous estimates and exhibit memory effects on temperature cycling in the absence of any perceptible chemical inhomogeneity, suggesting long-range strains as the probable origin.

Psychodermatology is an exciting field which deals with the close relationship that exists between dermatological and psychiatric disorders. A combined bio-psycho-social approach is essential for effective evaluation and treatment of these conditions. This review aims to give the practicing clinician an overview of psychiatric evaluation in patients with dermatological conditions.

Constipation was prevalent in more than half of patients receiving clozapine, which was severe and took longer time for recovery. Limitations include using a hospital-based sample and that dietary habits and lifestyle factors were not studied.

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The temperature dependence of morphology of InAs islands on Si grown through Stranski–Krastanow mode is investigated by atomic force microscopy. Formation of islands in the range of 15–50 nm is observed for depositions at various temperatures for the same monolayer coverage. Growth temperatures between 400 and 425 °C are found to yield dense ensembles of islands with uniform dimensional distributions. Found to exhibit long-term stability, these islands undergo morphological transformation when annealed at temperatures above 700 °C. Ostwald ripening occurs in these islands through an enhanced surface diffusion mechanism at high annealing temperatures. The results of annealing experiments indicate surface diffusion being the dominant mechanism responsible for morphological changes in these island structures rather than the heterointerface diffusion.

We investigate the unusual phase transitions in SrRuO3 and Sr0.5Ca0.5Ru1−xCrxO3 (x=0,0.05
and 0.1) employing x-ray diffraction, resistivity, magnetic studies and x-ray photoemission spectroscopy. Our results show the compounds undergo a crossover from itinerant ferromagnetism to
localized ferromagnetism. The combined studies suggest Ru and Cr be in the 4+ valence state. A
Griffith phase and an enhancement in Curie temperature (Tc) from 38 K to 107 K are observed with
Cr doping. A shift in the chemical potential towards the valence band is observed with Cr doping.
In the metallic samples, interestingly, a direct link between the resistivity and orthorhombic strain
is observed. We also observe a connection between orthorhombic strain and Tc in all the
samples. Detailed studies in this direction will be helpful to choose suitable substrate
materials for thin-film/device fabrication and hence manoeuvre its properties. In the
non-metallic samples, the resistivity is mainly governed due to disorder, electron-electron correlation effects and a reduction in the number of electrons at the Fermi level. The value of
the resistivity for the 5% Cr doped sample suggests semi-metallic behaviour. Understanding its
nature in detail using electron spectroscopic techniques could unravel the possibility of its utility
in high-mobility transistors at room temperature and its combined property with ferromagnetism
will be helpful in making spintronic devices.

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