The present investigation was undertaken to study the incidence and enterotoxigenicity of Bacillus cereus in raw meat and meat products. B. cereus was isolated from 29 (30.9 %) of the 94 samples analyzed. Recorded incidences of B. cereus from raw meat and meat products samples were 27.8 and 35 %, respectively. A high level of organism was found in cooked-meat (35 %) than raw meat samples (27.78 %) from 40 cooked-meat products and 54 raw meat samples analyzed. Screening of isolates by multiplex polymerase chain reaction revealed the overall distribution of various enterotoxin genes hblDAC complex, nheABC complex, cytK and entFM as 55.2, 89.7, 41.4 and 93 %, respectively. The level of contamination with B. cereus was moderately higher in some samples but did not exceed the level which is sufficient to induce food poisoning. A relatively higher incidence of B. cereus in meat products, with the majority of isolates harboring all the enterotoxin genes can pose a potential public health threat.

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Most of the best known SnTe‐based materials exhibit an attractive thermoelectric figure of merit (zT) only at the high‐temperature regime, but their performance at the low‐mid temperature ranges is quite uninspiring, and this discordance necessitates a large temperature gradient (∆T ≥ 550 K) to effectuate a reasonable efficiency, η. Here, the transition elements, Ti and Zr, that have not been used in the past are tried as dopants for SnTe and an enhanced device/average zT and/or η are reported with a lower ∆T ≈ 400 K and without the requisite for a stupendous peak/maximum zT. This notable performance emanates from—i) improved weighted mobility by optimally balancing between effective mass, carrier concentration, and mobility, ii) coupling of charge carriers with magnetic entropy, and the paramount factor being the iii) weakening of the chemical bonds (lattice softening). The thermal damping caused by lattice softening affects the phonon group velocity and the elastic properties, and the resultant increase in the degree of anharmonicity and the high density of internal strain‐fields, along with the phonon scattering effects, play an active role in tuning the overall thermoelectric performance. This work also excavates/opens up the discussion of applying the Heikes’ equation to qualitatively compare the trend of charge carriers for a given thermoelectric material system.

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Thermoelectric (TE) generators enable the direct and reversible conversion between heat and electricity, providing applications in both refrigeration and power generation. In the last decade, several TE materials with relatively high figures of merit (zT) have been reported in the low‐ and high‐temperature regimes. However, there is an urgent demand for high‐performance TE materials working in the mid‐temperature range (400–700 K). Herein, p‐type AgSbTe2 materials stabilized with S and Se co‐doping are demonstrated to exhibit an outstanding maximum figure of merit (zTmax) of 2.3 at 673 K and an average figure of merit (zTave) of 1.59 over the wide temperature range of 300–673 K. This exceptional performance arises from an enhanced carrier density resulting from a higher concentration of silver vacancies, a vastly improved Seebeck coefficient enabled by the flattening of the valence band maximum and the inhibited formation of n‐type Ag2Te, and ahighly improved stability beyond 673 K. The optimized material is used to fabricate a single‐leg device with efficiencies up to 13.3% and a unicouple TE device reaching energy conversion efficiencies up to 12.3% at a temperature difference of 370 K. These results highlight an effective strategy to engineer high‐performance TE material in the mid‐temperature range.