In these studies, pure ZnSe and ternary CdZnSe thin films were deposited onto glass and stainless-steel substrate by Chemical Bath deposition method. The structure and surface morphology of these as-deposited films were analyzed by Xray diffraction (XRD) and Scanning Electron Microscopy (SEM) techniques. The structural studies revealed that ZnSe and CdZnSe thin films were polycrystalline in nature and cubic (Zinc blend) structures. The structural parameters like lattice constant, crystallite size, internal strain, dislocation density were calculated. The SEM micrographs showed these films were composed of spherical shaped crystallites and EDX studies confirmed the elemental composition. Optical investigations showed high absorption coefficients and the energy band gap decreased from 2.81eV to 2.27eV when Cd +2 are incorporated in ZnSe lattice. Photoelectrochemical parameters were obtained for semiconductor-electrolyte junction selecting ZnSe and CdZnSe as photoanodes and Polysulphide as an electrolyte. The photocurrent, photo potential and quantum conversion efficiency were found to be enhanced significantly after adding Cd +2 to ZnSe lattice.
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