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In these studies, pure ZnSe and ternary CdZnSe thin films were deposited onto glass and stainless-steel substrate by Chemical Bath deposition method. The structure and surface morphology of these as-deposited films were analyzed by Xray diffraction (XRD) and Scanning Electron Microscopy (SEM) techniques. The structural studies revealed that ZnSe and CdZnSe thin films were polycrystalline in nature and cubic (Zinc blend) structures. The structural parameters like lattice constant, crystallite size, internal strain, dislocation density were calculated. The SEM micrographs showed these films were composed of spherical shaped crystallites and EDX studies confirmed the elemental composition. Optical investigations showed high absorption coefficients and the energy band gap decreased from 2.81eV to 2.27eV when Cd +2 are incorporated in ZnSe lattice. Photoelectrochemical parameters were obtained for semiconductor-electrolyte junction selecting ZnSe and CdZnSe as photoanodes and Polysulphide as an electrolyte. The photocurrent, photo potential and quantum conversion efficiency were found to be enhanced significantly after adding Cd +2 to ZnSe lattice.

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Pure and N-doped TiO2 nanoparticles for different dopant concentrations were synthesized by sol gel method. The samples were characterized for morphological and elemental analysis using Scanning Electron Microscope (SEM), and Energy Dispersive X-ray Spectroscopy (EDX), X-ray diffraction and Microraman spectroscopy and Optical properties by UV-Vis diffuse reflectance spectra. The Photocatalytic activity of the samples for methylene blue degradation was investigated under Xenon lamp and halogen lamp. 3N-doped TiO2 showed narrower band gap (2.98 eV) than undoped TiO2 (3.18 eV). As a result, it was observed that the photocatalytic activity of N-doped TiO2 nanoparticles was higher than that of undoped TiO2

The AR grade powders of Sr (OH)2 and TiO2 precursors use to prepare the SrTiO3 (STO) powder. STO powder is sintered at 800 0 C for 5h. The thixotropic pest is formulated for fabrication of STO thick films on glass substrate. The films were fabricated by using screen printing technique. The CuO-modified STO films were obtained by dipping technique. The STO films dipped into 0.01 molar aqueous CuCl2 solutions for different time intervals. These CuO-modified films were fired again at 500 0 C for 30 min. The films are proposed for the characterization. The pure and modified films were tested for different gases. The CuO-modified STO thick film (dipping time 10 min) gives highest response (930) at operating temperature 300 0 C to H2S gas for Cu doped STO and the (155) for Pure STO. Hence the synthesized sensor could be treated as H2S gas.