The combination of zero-dimensional (0D) colloidal CdSe/ZnS quantum dots with tin disulfide (SnS2), a two-dimensional (2D)-layered metal dichalcogenide, results in 0D-2D hybrids with enhanced light absorption properties. These 0D-2D hybrids, when exposed to light, exhibit intrahybrid nonradiative energy transfer from photoexcited CdSe/ZnS quantum dots to SnS2. Using single nanocrystal spectroscopy, we find that the rate for energy transfer in 0D-2D hybrids increases with added number of SnS2 layers, a positive manifestation toward the potential functionality of such 2D-based hybrids in applications such as photovoltaics and photon sensing.

Atomically thin transition metal dichalcogenides (TMDCs) have intriguing nanoscale properties like high charge mobility, photosensitivity, layer‐thickness‐dependent bandgap, and mechanical flexibility, which are all appealing for the development of next generation optoelectronic, catalytic, and sensory devices. Their atomically thin thickness, however, renders TMDCs poor absorptivity. Here, bilayer MoS2 is combined with core‐only CdSe QDs and core/shell CdSe/ZnS QDs to obtain hybrids with increased light harvesting and exhibiting interfacial charge transfer (CT) and nonradiative energy transfer (NET), respectively. Field‐effect transistors based on these hybrids and their responses to varying laser power and applied gate voltage are investigated with scanning photocurrent microscopy (SPCM) in view of their potential utilization in light harvesting and photodetector applications. CdSe–MoS2 hybrids are found to exhibit encouraging properties for photodetectors, like high responsivity and fast on/off response under low light exposure while CdSe/ZnS–MoS2 hybrids show enhanced charge carrier generation with increased light exposure, thus suitable for photovoltaics. While distinguishing optically between CT and NET in QD–TMDCs is nontrivial, it is found that they can be differentiated by SPCM as these two processes exhibit distinctive light‐intensity dependencies: CT causes a photogating effect, decreasing the photocurrent response with increasing light power while NET increases the photocurrent response with increasing light power, opposite to CT case.

Photoinduced hole transfer from a CdSe/ZnS quantum dot to a conjugated polymer is tuned by varying the quantum dot core size. Hole transfer affects the photoluminescence blinking of the quantum dot, increasing the duration of the on-states and decreasing that of the off-states.