The combination of zero-dimensional (0D) colloidal CdSe/ZnS quantum dots with tin disulfide (SnS2), a two-dimensional (2D)-layered metal dichalcogenide, results in 0D-2D hybrids with enhanced light absorption properties. These 0D-2D hybrids, when exposed to light, exhibit intrahybrid nonradiative energy transfer from photoexcited CdSe/ZnS quantum dots to SnS2. Using single nanocrystal spectroscopy, we find that the rate for energy transfer in 0D-2D hybrids increases with added number of SnS2 layers, a positive manifestation toward the potential functionality of such 2D-based hybrids in applications such as photovoltaics and photon sensing.

Atomically thin transition metal dichalcogenides (TMDCs) have intriguing nanoscale properties like high charge mobility, photosensitivity, layer‐thickness‐dependent bandgap, and mechanical flexibility, which are all appealing for the development of next generation optoelectronic, catalytic, and sensory devices. Their atomically thin thickness, however, renders TMDCs poor absorptivity. Here, bilayer MoS2 is combined with core‐only CdSe QDs and core/shell CdSe/ZnS QDs to obtain hybrids with increased light harvesting and exhibiting interfacial charge transfer (CT) and nonradiative energy transfer (NET), respectively. Field‐effect transistors based on these hybrids and their responses to varying laser power and applied gate voltage are investigated with scanning photocurrent microscopy (SPCM) in view of their potential utilization in light harvesting and photodetector applications. CdSe–MoS2 hybrids are found to exhibit encouraging properties for photodetectors, like high responsivity and fast on/off response under low light exposure while CdSe/ZnS–MoS2 hybrids show enhanced charge carrier generation with increased light exposure, thus suitable for photovoltaics. While distinguishing optically between CT and NET in QD–TMDCs is nontrivial, it is found that they can be differentiated by SPCM as these two processes exhibit distinctive light‐intensity dependencies: CT causes a photogating effect, decreasing the photocurrent response with increasing light power while NET increases the photocurrent response with increasing light power, opposite to CT case.

We demonstrate layer-dependent electron transfer between core/shell PbS/CdS quantum dots (QDs) and layered MoS2 via energy bandgap engineering of both donor (QD) and acceptor (MoS2) components. We do this by changing (i) the size of the QD or (ii) the number of layers of MoS2 and each approach alters the bandgap and/or the donor-acceptor separation distance, thus providing a mean of tuning the charge transfer rate. We find the charge transfer rate to be maximal for QDs of smallest size and for QDs combined with a 5-layers MoS2 or thicker. We model our charge transfer rate layer dependency with the theoretical model of Marcus previously applied to non-adiabatic electron transfer in weakly coupled systems by considering QD electron transferring to non-interacting monolayers in a few layer MoS2 and find this model to fit well our experimental data.

The CuI-derived inorganic−organic hybrid compounds are considered as promising phosphors for the lighting industry. Herein, exploiting N-monoalkylated hexaminium salts, [R-HMTA]X (R = Me, Et, Pr, and propargyl; X = Cl and I), as multibridging ligands, we have designed and synthesized a unique class of one-dimensional and two-dimensional hybrid CuImaterials. The reactions of these salts with CuI give rise to Allin-One (AIO) type compounds combining ionic and dative bonds between inorganic and organic components. The latter is formed by structurally unique inorganic [Cu x I y ] (y−x)− clusters, chains, or sheets interconnected through [R-HMTA] + cations via multiple Cu−N bonds. The so-designed compounds at ambient temperature exhibit tunable luminescence spanning from deep blue to red color (λ em = 430−625 nm) with microsecond lifetimes and the quantum efficiency of up to 78%. Remarkably, the AIO materials feature nontrivial excitation-(ED) and temperature-dependent (TD) luminescence, allowing their emission color to be finely adjusted from deep blue to red through changing the excitation wavelength and/or temperature. Based on the TD emission spectroscopy and theoretical calculations, a possible mechanism of the luminescence has been proposed. The very interesting luminescence characteristics coupled with good thermal and photostability render these AIO hybrid materials possible candidates for applications in energy-efficient lighting devices.

Photocurrent production in quasi-one-dimensional (1D) transition-metal trichalcogenides, TiS3(001) and ZrS3(001), was examined using polarization-dependent scanning photocurrent microscopy. The photocurrent intensity was the strongest when the excitation source was polarized along the 1D chains with dichroic ratios of 4:1 and 1.2:1 for ZrS3 and TiS3, respectively. This behavior is explained by symmetry selection rules applicable to both valence and conduction band states. Symmetry selection rules are seen to be applicable to the experimental band structure, as is observed in polarization-dependent nanospot angle-resolved photoemission spectroscopy. Based on these band symmetry assignments, it is expected that the dichroic ratios for both materials will be maximized using excitation energies within 1 eV of their band gaps, providing versatile polarization sensitive photodetection across the visible spectrum and into the near-infrared.

Although fluorescence and lifetimes of nanoscale emitters can be manipulated by plasmonic materials, it is harder to control polarization due to strict requirements on emitter environments. An ability to engineer 3D nanoarchitectures with nanoscale precision is needed for controlled polarization of nanoscale emitters. Here, we show that prescribed 3D heterocluster architectures with polarized emission can be successfully assembled from nanoscale fluorescent emitters and metallic nanoparticles using DNA-based self-assembly methods. An octahedral DNA origami frame serves as a programmable scaffold for heterogeneous nanoparticle assembly into prescribed clusters. Internal space and external connections of the frames are programmed to coordinate spherical quantum dots (QDs) and gold nanoparticles (AuNPs) into heterocluster architectures through site-specific DNA encodings. We demonstrate and characterize assembly of these architectures using in situ and ex situ structural methods. These cluster nanodevices exhibit polarized light emission with a plasmon-induced dipole along the QD-AuNP nanocluster axis, as observed by singlecluster optical probing. Moreover, emittance properties can be tuned via cluster design. Through a systematic study, we analyzed and established the correlation between cluster architecture, cluster orientation, and polarized emission at a single-emitter level. Excellent correspondence between the optical behavior of these clusters and theoretical predictions was observed. This approach provides the basis for rational creation of single-emitter 3D nanodevices with controllable polarization output using a highly customizable DNA assembly platform.

The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4Se3(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.

Atomically thin 2D van der Waals (2D-vDW) materials have attracted significant attention for optoelectronic applications in photodetectors, photovoltaics, and quantum information science. Their atomically thin thickness, however, renders them poor absorbers. Hybrid structures of 2D-vDW materials assembled with other semiconducting materials, such as quantum dots, nanowires, polymers, other 2D-vDW materials, or 3D bulk materials, have provided an elegant way to increase light harvesting and carrier generation via interfacial charge and energy transfer interactions.Here we present recent examples focused on the characterization of interfacial charge transfer and energy transfer in 2D-vDW hybrids and heterostructures and methods to modulate and control these processes through band gap engineering, morphology engineering, and external factors. Finally, we discuss potential future directions of research, including scalability from micron-sized flake-based devices to wafer size for commercial deployment, issues with long-term stability and performance, and the ability to extend the spectral range of these 2D hybrids.