We present the development of the DSSC instrument: an ultra-high speed detector system for the new European XFEL in Hamburg. The DSSC will be able to record X-ray images with a maximum frame rate of 4.5 MHz. The system is based on a silicon pixel sensor with a DEPFET as a central amplifier structure and has detection efficiency close to 100% for X-rays from 0.5 keV up to 10 keV. The sensor will have a size of approximately 210 210 mm composed of 1024 1024 pixels with hexagonal shape. Two hundred fifty six mixed signal readout ASICs are bump-bonded to the detector. They are designed in 130 nm CMOS technology and provide full parallel readout. The signals coming from the sensor are processed by an analog filter, immediately digitized by 8-bit ADCs and locally stored in an SRAM, which is able to record at least 640 frames. In order to fit the dynamic range of about photons of 1 keV per pixel into a reasonable output signal range, achieving at the same time single 1 keV photon resolution, a non-linear characteristic is required. The proposed DEPFET provides the needed dynamic range compression at the sensor level. The most exciting and challenging property is that the single 1 keV photon resolution and the high dynamic range are accomplished within the 220 ns frame rate of the system. The key properties and the main design concepts of the different building blocks of the system are discussed. Measurements with the analog front-end of the readout ASIC and a standard DEPFET have already shown a very low noise which makes it possible to achieve the targeted single photon resolution for 1 keV photons at 4.5 MHz and also for 0.5 keV photons at half of the speed. In the paper the new experimental results obtained coupling a single pixel to an 8 8 ASIC prototype are shown. This 8 8 ASIC comprises the complete readout chain from the analog front-end to the ADC and the memory. The characterization of a newly fabricated non-linear DEPFET is presented for the first time.Index Terms-DEPFET, DSSC, silicon radiation detectors, X-ray detectors, X-ray free electron lasers.
The first DSSC 1-megapixel camera became available at the European XFEL in the Hamburg area in February 2019. It was successfully tested, installed and commissioned at the Spectroscopy and Coherent Scattering Instrument. DSSC is a high-speed, large-area, 2-D imaging detector system optimized for photon science applications in the energy range between 0.25 keV and 6 keV. The camera is based on direct conversion Si-sensors and is composed of 1024×1024 pixels of hexagonal shape with a side length of 136 µm. 256 ASICs provide full parallel readout, comprising analog filtering, digitization and in-pixel data storage. In order to cope with the demanding X-ray pulse time structure of the European XFEL, the DSSC provides a peak frame rate of 4.5 MHz. The first megapixel camera is equipped with Miniaturized Silicon Drift Detector pixel arrays. The intrinsic response of the pixels and the linear readout limit the dynamic range but allow one to achieve noise values of about 60 electrons r.m.s. at the highest frame rate. The challenge of providing high-dynamic range (~10 4 photons/pixel/pulse) and single photon detection simultaneously requires a non-linear system front-end, which will be obtained with the DEPFET active pixel technology foreseen for the advanced version of the camera. This technology will provide lower noise and a nonlinear response at the sensor level. The paper describes the The manuscript was submitted on 28.02.2021. The development described in this work was initiated, funded and coordinated by the European XFEL GmbH in the framework of the DSSC project.
The focal-plane module is the key component of the DEPFET sensor with signal compression (DSSC) mega-pixel X-ray imager and handles the data of 128 × 512 pixels. We report on assembly-related aspects, discuss the experimental investigation of bonding behavior of different adhesives, and present the metrology and electrical test results of the production. The module consists of two silicon (Si) sensors with flip-chip connected CMOS integrated circuits, a Si-heat spreader, a low-temperature co-fired ceramics circuit board, and a molybdenum frame. A low-modulus urethane-film adhesive fills the gaps between onboard components and frame. It is also used between board and heat spreader, reduces the misfit strain, and minimizes the module warpage very efficiently. The heat spreader reduces the on-board temperature gradient by about one order of magnitude. The placement precision of the bare modules to each other and the frame is characterized by a standard deviation below 10 and 65 µm, respectively. The displacement due to the in-plane rotation and vertical tilting errors remains below 80 and 50 µm, respectively. The deflection of the sensor plane shows a mean value below 30 µm with a standard deviation below 15 µm. Less than 4% of the application-specified integrated circuits (ASICs) exhibit a malfunction. More than two-thirds of the sensors have a maximum leakage current below 1 µA.
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